退火制度对PZT铁电薄膜性能的影响  

Influence of Annealing on Properties of PZT Ferroelectric Thin Films

作　　者：张宁欣[1] 侯生根[1] 任天令[1] 刘理天[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《仪器仪表学报》2003年第z2期309-310,共2页Chinese Journal of Scientific Instrument

基　　金：国家"863"(2002AA404500)资助项目;"973"(G1999033105)资助项目

摘　　要：铁电薄膜的性质对于硅基MEMS器件有重要的影响,鉴于此本文尝试通过改善退火工艺以提高PZT薄膜的铁电和压电性质。采用溶胶凝胶法,在Si/SiO_2/Ti/Pt衬底上制备了PZT铁电薄膜。实验中,采用一次退火工艺和每层退火工艺制备了两种PZT薄膜,采用XRD对薄膜的晶体结构进行分析,通过C—V和I—V特性的研究发现,每层退火工艺有助于提高PZT薄膜的C—V性质,并降低漏导电流。Due to the importance of ferroelectric thin film quality on silicon based MEMS,the attempting on im- proving the ferroelectric and piezoelectric properties of PZT thin film via modification of annealing processing was carried out. PZT thin film was spin-coated on Si/SiO_2/Ti/Pt substrate via sol-gel method. During experiment, two annealing methods,thus one final annealing and one annealing for each layer were adopted. The crystalline structures of thin films were analyzed by X-ray diffraction,and C-V,I-V measurements showed an improved C-V performance and lower leakage current in film prepared with one annealing processing for each layer.

关 键 词：退火制度PZT 溶胶凝胶 漏导电流 

分 类 号：TN3[电子电信—物理电子学]