IGBT构思的实现是电力电子技术走向高频大功率化的里程碑  

The Accomplishment of IGBT's Conception Is a Mileston of Power Electronics Technology Towards the High Power-High Frequencilization

作　　者：王正元[1] 

机构地区：[1]北京电力电子新技术研究开发中心,北京100088

出　　处：《电力电子》2003年第Z1期58-61,共4页Power Electronics

摘　　要：介绍并点评了IGBT(当时称为IGT)处于襁褓时期的经典论文——美籍印度人B.J.Baliga博士1983年发表的"绝缘栅晶体管(IGT)——一种新型功率开关器件"。分析了该论文的背景。20年来,IGBT构思的形成和实现,对电力电子技术的发展起到重大推动作用。它打开了电力电子技术向高频大功率化发展的新纪元,使其应用产品小型轻量化,并为国民经济相关领域的自动化、智能化、高效节能化和机电一体化做出了显著贡献。文中还对该论文的作者做了简单介绍。The paper "The Insulated Gate Transistor(IGT)——a New Power Switching Device", which was written by Dr. B. J. Baliga, who is an American Indian, and presented in 1983 is breifly introduced and reviewed. This is a classical paper, when IGBT(then it is called IGT) was in its infancy. The background of this paper are analyzed. In the 20 years since then, the forming and accomplishment of IGBT s conception plays an important motive part in the development of power electronics technology. It has opened the door o...

关 键 词：绝缘栅双极晶体管 电力电子 高频大功率化 

分 类 号：TN322.8[电子电信—物理电子学]