水平式MOCVD系统生长速度均匀性的研究  

A Research on Growth Rate Uniformty Within Horizontal MOCVD Systems

作　　者：刘国军[1] 徐莉[1] 史全林[1] 王喜祥 张千勇[1] 

机构地区：[1]长春光学精密机械学院近代光学研究所

出　　处：《长春光学精密机械学院学报》1993年第1期11-15,共5页Journal of Changchun Institute of Optics and Fine Mechanics

摘　　要：本文讨论了影响生长速度的因素,如主载气流量、金属有机源流量(在一定蒸气压下),衬底放置位置,及掺杂和非掺杂情况等.对实验结果进行了计论,并与其它文献进行了比较.着重阐述了改善侧向均匀性问题.This paper disscusses some of the factors affecting growth rates within MOCVD systems; such as the flow rates of the carrier gas and organometallic sources, position of substrate, doping and undoping as weel as doping levels. The experimental resultes are discussed and compared with other publications. Lateral uniformity problem has been expounded specifically.

关 键 词：MOVCD 生长速率 均匀性 

分 类 号：TN305[电子电信—物理电子学]