对称薄膜双栅nMOSFET模型的研究  

Modeling of Symmetric Thin-Film Double-Gate nMOSFET's

作　　者：叶晖 李伟华 

机构地区：[1]东南大学微电子中心,江苏南京210096

出　　处：《微电子学》2002年第6期419-422,共4页Microelectronics

摘　　要：　利用对称薄膜双栅MOSFET在阈值电压附近硅膜中的常电位近似,以硅膜达到体反型时的泊松方程为基础,得到一个有效的双栅nMOS器件模型。考虑到薄膜双栅SOI器件的体反型特性,阈值电压处的表面势不再受限于传统的强反型界限(指2倍费米势),并运用跨导最大变化(TC)法对此模型进行分析,得到阈值电压和阈值电压处表面势的详细表达式;另外,还演示了薄膜双栅MOSFET的近乎完美的亚阈值斜率特性,其数值模拟结果与文献实验结果吻合较好。An analytical model that is valid near and below threshold is derived for doublegate nMOS devices. The model is based on Poisson's equation, containing both the depletion charges and minority carriers, and constant voltage assumption in vertical silicon layer near the threshold voltage. By using the maximum transconductance change (TC) method, the model provides explicit expressions of the threshold voltage and threshold surface potential, which is no longer pinned at the classical limit of strong inversion due to the volume inversion characteristics of the thinfilm doublegate SOI devices, and the nearly ideal subthreshold slope of thinfilm doublegate MOSFET was demonstrated. Finally, very good agreement with numerical simulations is observed.

关 键 词：薄膜双栅 MOSFET 器件模型 跨导最大变化法 强反型界限 

分 类 号：TN386[电子电信—物理电子学]