带UVLO功能的CMOS零温度系数带隙基准  

CMOS Band-Gap Voltage Reference of Zero Temperature Coefficients with UVLO Function

作　　者：张涛[1] 李伊珂[1] 廖永波[1] 

机构地区：[1]电子科技大学VLSI设计中心,成都610054

出　　处：《电子科技大学学报》2008年第S1期118-121,共4页Journal of University of Electronic Science and Technology of China

摘　　要：采用CMOS工艺设计了一种零温度系数的带隙基准与零温度系数欠压闭锁(UVLO)的复用电路。由于这种复用,使其与传统的采用BiCMOS或CMOS工艺设计的电路相比,工艺成本低,易于实现。电路由通过改进的带隙结构产生零温度系数的基准电压,并同时检测输入电压,产生对温度和工艺不敏感的输入电压检测信号跳变阈值,实现欠压闭锁。同时通过反馈实现迟滞,克服了单一阈值的弱抗干扰能力。This paper proposes a voltage reference based on standard CMOS process. The reference voltage with zero temperature coefficient is generated by the modified band-gap structure. By monitoring the input voltage, the reference generates a precise UVLO signal whose threshold voltage has little dependence to the temperature and technology change. Additionally, the hysteresis is realized by using a feedback circuit.

关 键 词：带隙基准 CMOS工艺 温度系数 欠压闭锁 

分 类 号：TN432[电子电信—微电子学与固体电子学]