发光二极管表面结构对出光特性的影响  

Effect of surface structures of light emitting diodes on light emitting efficiency

作　　者：张玉敏[1] 邹德恕[1] 韩金茹[1] 沈光地[1] 

机构地区：[1]北京工业大学北京光电子技术实验室,北京100124

出　　处：《光电子．激光》2009年第2期174-177,共4页Journal of Optoelectronics·Laser

基　　金：北京市科委资助项目(D04003040221);北京市人才强教计划资助项目(05002015200504);北京工业大学研究生科技基金资助项目(YKJ-2007-3005)

摘　　要：用传输矩阵法模拟计算了AlGaInP发光二极管(LED)不同表面结构的光学特性,用等离子体增强化学气相沉积(PECVD)或磁控溅射掺铟氧化锡(ITO)设备,在带有DBR结构的外延衬底上制备出具有不同表面层结构的LED。通过实验结果对比表明,表面生长λ/4nSiON加λ/2nITO增透膜结构复合增透膜的LED,器件光学性能提高最佳,在20 mA注入电流下,光强和光通量分别达到141.7 mcd和0.473 3 lm。比同样结构的无增透膜LED轴向光强和光通量分别提高138%和91%。The optical performance of AlGaInP light emitting diodes(LEDs) with different surface structure has been simulated using transmission matrix formalism.PECVD and magnetron sputtering ITO are used to fabricate LEDs with different surface structures on DBR epilayer substrates.The test results show that the LEDs with coupled antireflection coatings of λ/4n SiON and λ/2n ITO have the best optical performance.At 20 mA injection current,the vertical output light intensity is 141.7 mcd,and the luminous flux is 0.47...

关 键 词：ALGAINP发光二极管 增透膜 传输矩阵法 等离子体增强化学气相沉积(PECVD) 掺铟氧化锡(ITO) 

分 类 号：TN312.8[电子电信—物理电子学]