0.35μm BiCMOS工艺的器件建模  

Device Modeling for 0.35μm BiCMOS Technology

作　　者：苏海伟[1] 杨立斌[1] 唐威[1] 吴龙胜[1] 刘佑宝[1] 

机构地区：[1]西安微电子技术研究所,陕西西安710075

出　　处：《微电子学与计算机》2009年第3期81-85,共5页Microelectronics & Computer

摘　　要：针对0.35μm BiCMOS工艺的MOS及Bipolar晶体管器件,分析其结构特征及相应物理效应,选取相应的晶体管器件理论模型,确定了样管测试条件和方法,设计了测试结构及模型验证环振电路,完成用于试验流片及参数提取的测试版芯片的设计,最终利用测试芯片的测量数据提取模型参数,分别建立高精度的MOS及Bipolar器件SPICE模型.Device structure characterization and its physical effect has been analyzed for the 0.35μm BiCMOS process.Then,the corresponding theory models,and the test bench and methodology for the transistor devices have been determined.As a result,the device test structure and model verifying circuit has been designed,with the test data,parameters extraction has been finished,finally the accurate SPICE models for the transistors have been built.

关 键 词：BICMOS BSIM GP 

分 类 号：TN386[电子电信—物理电子学]