快速热退火对电子束蒸镀的ITO膜光电特性影响  

The effect of RTA process on optical and electrical characters of E-beam evaporated ITO films

作　　者：张国伟[1] 朱彦旭[1] 李天[1] 沈光地[1] 

机构地区：[1]北京工业大学北京光电子技术实验室,北京100124

出　　处：《光电子．激光》2009年第3期346-349,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"计划资助项目(2006CB604902);国家"863"计划资助项目(2006AA03A121);北京市人才强教计划资助项目(05002015200504)

摘　　要：用真空电子束蒸镀的方法制备半导体发光二极管LED所用的ITO膜,然后在N2气环境中进行快速热退火(RTA)处理,对ITO膜的各项特性进行测试分析。结果表明,ITO的电阻率并不随RTA温度上升单调下降,而是在达到一个峰值后下降,在不超过240s时间内,ITO电阻率随RTA时间的增加而单调降低,霍尔测试结果表明影响电阻率的主要原因是载流子的迁移率。RTA处理对ITO膜的光透过率有一定的改善作用,并且使膜的折射率上升。ITO film used in semiconductor LED process is fabricated with vacuum E-beam evaporation.RTA is then processed to the film in N2 atmosphere,and the characteristics of ITO film after RTA are tested and analyzed.The result shows that the resistance of ITO film does not rise with RTA temperature all through;it rises to a peak,and then falls down.During RTA time that is no longer than 240 s,the resistance of ITO film falls while the RTA time increases.The result from Hall test indicates that the main reason of t...

关 键 词：电子束蒸镀 ITO 快速热退火(RTA) 电阻率 折射率 

分 类 号：O484.41[理学—固体物理]