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作 者:许燕平[1] 陈小龙[1] 兰玉成[1] 曹永革[1] 许涛[1] 蒋培植[1] 陆坤权[1] 梁敬魁[1]
机构地区:[1]中国科学院物理研究所
出 处:《人工晶体学报》2000年第S1期118-118,共1页Journal of Synthetic Crystals
摘 要:Wurtzite structure gallium nitride GaN,a direct bandgap semiconductor,is an ideal material for fabrication of blue/green light emitting diodes,laser diodes, and high powder Integrated Circuites.Up to now,small single crystals,powders and nanomaterials of GaN have successfully synthesized as well as applied films gro wn by MOCVD.In this report,another condensed state of GaN,nanocrystal assembled bulk,was synthesized and its spectra are investigated. Metal gallium or gallium alloys are used as starting materials and haloids used as catalyzer in ammonia.Buff transparent GaN bulks were obtained at 350—500℃.P owder X ray diffraction indicated that the bulks are wurtaite GaN single phase. HRTEM confirmed that the bulks are composed of nanoparticles with average size o f 12mm.The well crystallized particle shows clear diffraction spots.PL spectra of the material are similar to that of GaN singe crystals under the ultraviolet excitation,but blue shift is observed near gap band.Red shift occurs in Raman scattering comparing with single crystals.The materials have the broad potential in the future because it not only possesses of mechanical and optical characteri stics owned by single crystals but also holds the nano properties of the nanoma terials.Wurtzite structure gallium nitride GaN,a direct bandgap semiconductor,is an ideal material for fabrication of blue/green light emitting diodes,laser diodes, and high powder Integrated Circuites.Up to now,small single crystals,powders and nanomaterials of GaN have successfully synthesized as well as applied films gro wn by MOCVD.In this report,another condensed state of GaN,nanocrystal assembled bulk,was synthesized and its spectra are investigated. Metal gallium or gallium alloys are used as starting m...
关 键 词:GaN nanocrystalline semiconductor materials SPECTRA
分 类 号:TN304[电子电信—物理电子学]
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