Wurtzite structure gallium nitride, GaN,a direct bandgap semiconductor(3.4 eV at room temperature),is an ideal material for fabrication of blue/green light emit ting diodes(LED),laser diodes(LD),and high power integra...
Wurtzite structure gallium nitride GaN,a direct bandgap semiconductor,is an ideal material for fabrication of blue/green light emitting diodes,laser diodes, and high powder Integrated Circuites.Up to now,small single ...