表面传导电子发射显示器微细结构光刻工艺的优化  

Optimization of Photolithography Process on the Fine Structure of Surface-conduction Electron-emitter Display

作　　者：张永爱[1] 许华安[1] 郭太良[1] 

机构地区：[1]福州大学,场致发射显示技术教育部工程研究中心,福州350002

出　　处：《光电子技术》2009年第2期125-129,共5页Optoelectronic Technology

基　　金：国家“863”计划平板显示重大专项(2008AA03A313);福建省科技厅资助省属高校项目(2008F5001);福州大学科技发展基金(2008-XY-11)

摘　　要：研究了旋涂和光刻工艺对制备表面传导发射显示器(SED)微细结构的影响,分析正性光刻胶和旋涂工艺的作用机理,探讨光刻胶的平面旋涂工艺、曝光剂量、前烘对光刻图形的影响.借助旋涂技术将光刻胶转移在附有金属薄膜的玻璃基片上,利用紫外光对其进行曝光,通过视频显微镜、台阶仪对实验结果分析,优化实验工艺参数.结果表明,光刻胶留膜率随旋转速度增大而减少,随光刻胶的粘度增大而增大,光刻图形宽度随曝光剂量的增大而变窄,曝光剂量40～50 mJ/cm2,前烘110 ℃保温25 min条件下光刻图形边缘平整,为研制SED微细结构奠定了基础.Spin coating and lithography technics effects on preparaing micro-structure of surface-conduction electron-emitter display are studied.Essential mechanism of positive photoresist and spin coating technology are analysed.The influences on lithorgraphy pattern from surface spin coating technics of photoresist,exposure dose and prebaking are discussed.Positive photoresist is coated on the surface of metal film-coated glass by spin coating technics and achieved by exposuring to UV lamp.The results were observed by dint of video microscope and profilometer and the optimal experiment technics is confirmed.It shows that the thickness of photoresist became thinner with the increase of spining speed and decrease of viscosity,the wideth of lithorgraphy pattern became narrower with the accretion of exposure dose.The lithorgraphy pattern is fine and regular under the condition of exposuring with 40-50 mJ/cm2 and prebaking at 110℃/25 min.The techniques can be applied to preparae fine structrue of SED.

关 键 词：表面传导电子发射显示器 光刻 旋涂 曝光剂量 前烘 

分 类 号：TN27[电子电信—物理电子学]