六方晶格基底上薄膜生长的Monte Carlo模拟研究  

Monte Carlo simulation and study of thin films growing on hexagonal substrate

作　　者：谭天亚[1] 陈俊杰[1] 江雪[1] 李春梅[1] 苏宇[1] 吴炜[1] 

机构地区：[1]辽宁大学物理学院沈阳市光电子功能器件与检测技术重点实验室,沈阳110036

出　　处：《原子与分子物理学报》2009年第1期188-192,共5页Journal of Atomic and Molecular Physics

基　　金：沈阳市科学技术计划项目(1071115-1-00);辽宁省教育厅科研计划(2008224);辽宁省科技厅科研计划(20081030)

摘　　要：利用Monte Carlo(MC)方法,模拟研究了六方晶格基底上薄膜生长的初始阶段岛的形貌和岛的尺寸与薄膜覆盖度以及入射粒子沉积速率之间的关系.结果表明在基底温度为300K时,岛的形貌主要表现为分形生长,随着薄膜覆盖度的增加,岛的分形枝簇变大,岛的数目不断减少.在同样的温度下,随着入射粒子沉积速率的增大,薄膜表面的形貌逐步由少数聚集型岛核分布状态向众多各自独立的离散型岛核分布状态过渡.进一步研究得出,薄膜覆盖度和入射粒子沉积速率对粒子扩散能力的影响最终导致岛的形貌发生了改变.In this paper, the effect of coverage with film and deposition rate of incident particles on the morphology and size of an island at the early stage of thin film growing on hexagonal substrate is studied by Monte-Carlo simulation. The results show that with temperature being 300K, the morphology of islands mainly take on fractal form, and with coverage with film increasing, fractal branches of islands grow more and more large and the number of islands becomes more and more few. With deposition rate of incident particles increasing at the same temperature, facial morphology of thin film changes from distributing state of collective and handful islands to one of numerous and discrete islands. Further study shows that the effect of coverage with film and deposition rate of incident particles on diffusivity of particles results in the change of morphology of islands.

关 键 词：MONTE CARLO模拟 薄膜生长 薄膜覆盖度 沉积速率 

分 类 号：O484.1[理学—固体物理]