INTERFACE REACTION IN MAGNETIC MULTILAYERS  

作　　者：G.H. Yu, M.H Li, F. W Zhu, X.F. Cui and J.L. Jin ( Department of Materials Physics, University of Science and Technology Beijing, Beijing 100083, China) ( State key laboratory for Advanced Metals and Materials, University of Science and Technology Beijing 

出　　处：《Acta Metallurgica Sinica(English Letters)》2001年第6期479-484,共6页金属学报（英文版）

基　　金：supported by the National Natural Science Foundation of China and Beijing under grant No.19890310 and 2012011,respectively

摘　　要：Ta/NiO/NiFe/Ta multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) between NiO and NiFe reached 120O e. The composition and chemical states at the interface region of NiO/NiFe were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there are two thermodynamically favorable reactions at NiO/NiFe interface: NiO+Fe=Ni+FeO and 3NiO+2Fe=3Ni+Fe2O3. The thickness of the chemical reaction as estimated by angle-resolved XPS was about 1-1.5 nm. These interface reaction products are magnetic defects, and we believe that the Hex and the coercivity (Hc) of NiO/NiFe are affected by these defects. Moreover, the results also show that there is an intermixing layer at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction: 2Ta+5NiO+Ta2O5. This interface reaction has an effect on the exchange coupling as well. The thickness of the intermixing layer as estimated by XPS depth-profiles was about 8-10 nm.Ta/NiO/NiFe/Ta multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) between NiO and NiFe reached 120O e. The composition and chemical states at the interface region of NiO/NiFe were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there are two thermodynamically favorable reactions at NiO/NiFe interface: NiO+Fe=Ni+FeO and 3NiO+2Fe=3Ni+Fe2O3. The thickness of the chemical reaction as estimated by angle-resolved XPS was about 1-1.5 nm. These interface reaction products are magnetic defects, and we believe that the Hex and the coercivity (Hc) of NiO/NiFe are affected by these defects. Moreover, the results also show that there is an intermixing layer at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction: 2Ta+5NiO+Ta2O5. This interface reaction has an effect on the exchange coupling as well. The thickness of the intermixing layer as estimated by XPS depth-profiles was about 8-10 nm.

关 键 词：FABRICATION Interfaces (materials) Magnetic materials MAGNETRONS Reaction kinetics SPUTTERING 

分 类 号：TG111[金属学及工艺—物理冶金]