电子束光刻的快速邻近效应校正  

Fast Correction of Proximity Effect in Electron-beam Lithography

作　　者：宋会英[1] 张玉林[2] 于肇贤[3] 郝慧娟[2] 

机构地区：[1]中国石油大学(华东)计算机与通信工程学院,山东东营257061 [2]山东大学控制学院电子束研究所,济南250061 [3]北京信息科技大学理学院,北京100101

出　　处：《微细加工技术》2007年第3期1-5,64,共6页Microfabrication Technology

基　　金：国家自然科学基金重大研究计划资助项目(90307003)

摘　　要：提出了实现电子束光刻的快速邻近效应校正的分级模型。首先利用矩阵实现内部最大矩形和顶点矩形的快速替换,然后对内部最大矩形和顶点矩形进行校正迭代。在校正迭代的过程中,用局部曝光窗口与曝光强度分布函数直接卷积计算邻近图形对关键点产生的有效曝光剂量,将整个曝光块近似为一个大像点,以计算全局曝光窗口中的曝光图形对关键点产生的有效曝光剂量,实现了快速图形尺寸校正。在与同类软件精度相同的情况下,提高了运算速度。A hierarchical model of fast correction of the proximity effect in electron-beam lithography was proposed. Firstly, the primitive rectangles are replaced by an inner maximal rectangles (IMR) after the IMR matrix was built. Secondly, the IMR and the rectangles on the vertexes were iteratively corrected. During the iterative correction, the effective dose of the electron beam on the critical points produced by near pattern elements in the local exposure window was calculated by the direct convolution of the local window with the distribution function of the exposure strength, and then each exposure block was considered as a large pixel to calculate the effective dose of the beam on the critical points produced by pattern elements in the global exposure window. So, the shape correction is realized rapidly. Compared with similar software with the same precision, the correction speed of ours is improved.

关 键 词：邻近效应校正 局部曝光窗口 全局曝光窗口 关键点 

分 类 号：TN305.7[电子电信—物理电子学]