电子束直写中X射线光刻掩模的热形变研究  

Study on Distortion of X-ray Lithography Mask during Electron-beam Patterning

作　　者：尚鸿雁[1] 王永坤[2] 

机构地区：[1]上海海事大学物流工程学院,上海200135 [2]北京航空航天大学航空科学与工程学院,北京100083

出　　处：《微细加工技术》2007年第5期10-13,25,共5页Microfabrication Technology

摘　　要：对X射线掩模电子束制备图形过程建立三维有限元模型,提出用热流密度等效法简化瞬态热应力计算,得到了X射线掩模在电子束直写过程中的瞬态热形变。结果表明,掩模面内形变在直写过程中出现振荡变化,最大值为8.24 nm,方向背离电子束光照中心,掩模面外形变最大值为9.75μm,方向沿图形窗口法线方向,并出现在电子束束斑中心。Three-dimensional finite element model was developed to simulate the distortion of X-ray lithography mask during electron-beam writing(EBW).Equivalent heat flux method was proposed to simplify the calculation of the transient thermal stress simulation and the distortion of X-ray lithography mask during electron-beam writing was obtained.The results show that the in-plane distortion(IPD) of the mask appears a fluctuation during electron-beam writing,which the maximum value is 8.24 nm and the direction is deviated from the center of the beam.The maximum out-of-plane distortion(OPD) is 9.75 μm,the direction is normal to the pattern window and the center of the beam appears.

关 键 词：面内形变 面外形变 电子束直写 图形制备 有限元分析 

分 类 号：TN305.7[电子电信—物理电子学]