空气等离子体刻蚀对金刚石薄膜性能的影响  

Influence of Air Plasma Treatment on the Performance of Diamond Films

作　　者：李德贵[1] 冉均国[1] 廖晓明[1] 苟立[1] 苏葆辉[1] 

机构地区：[1]四川大学材料学院,成都610065

出　　处：《微细加工技术》2006年第2期30-32,48,共4页Microfabrication Technology

基　　金：国家自然科学基金资助项目(10275046)

摘　　要：为了提高金刚石薄膜电学和辐射响应性能,在石英钟罩式MPCVD装置中,采用微波空气等离子体刻蚀处理来提高金刚石薄膜的纯度、电阻率和辐射剂量计响应性能,研究了不同的微波功率、气体流量、处理时间对金刚石薄膜电阻率、X光响应的影响,结果表明,空气等离子体中高能、高活性的氧和氮能有效刻蚀薄膜表面的石墨等非金刚石相,提高膜的纯度,使金刚石薄膜的电阻率从1.11×109Ω·cm提高到1.83×1014 Ω·cm,提高了5～6个数量级,且处理后的金刚石薄膜X射线响应灵敏度提高了15倍,并获得了最佳的空气等离子体刻蚀条件.空气等离子体刻蚀处理是一种易于掌控的刻蚀方法,可有效提高金刚石薄膜表面质量,且资源丰富,价格便宜.In order to improve the properties in electronics and radiation response, with bell jar MPCVD deposition equipment, the influence of different microwave power, gas flux and treatment time on the resistivity and the X-ray response of diamond films have been studied. The experimental results indicate that oxygen and nitrogen of high energy and high activity in air plasma effectively etch the non-diamond phase and increase the purity of diamond films. The diamond films etched by air plasma have higher resistivity (1.83 × 1014 Ω·cm) that is increased by 5 to 6 orders of magnitude and the sensitivity of X-ray response is 15 times that of non-treatment one. This treatment is a controllable technique that can effectively improve quality of diamond films.

关 键 词：金刚石薄膜 电阻率 CVD 等离子体 辐射剂量计 

分 类 号：TQ163.2[化学工程—高温制品工业]