InGaN蓝光LED量子效率与注入电流的关系研究  

Investigation on the injected current dependence of InGaN blue LED's quantum efficiency

作　　者：张福林[1] 林旭[1] 廖欣[1] 何志毅[1] 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《光电子．激光》2009年第11期1442-1445,共4页Journal of Optoelectronics·Laser

基　　金：广西自治区教育厅基金资助项目(D200649)

摘　　要：研究了InGaN蓝光LED量子效率随注入电流的变化关系,当注入电流还未达到额定电流时,LED量子效率就随着注入电流增加而快速降低。通过Matlab计算出在俄歇复合的无辐射复合机制下量子效率与注入电流的理论关系式。与实验值的拟合结果显示,大电流注入下,LED的效率衰落同时由俄歇复合及其产生的热电子从发光有源区泄露引起。由蓝光LED这一效率-电流特性,提出了增强InGaN蓝光LED效率的途径。The dependence of quantum efficiency on injected current of InGaN Blue LEDs is examined,which exhibits an efficiency droop with increasing the injected current to a value below the LED's rated current.The theoretical relationship between the quantum efficiency and the injected current is obtained by Matlab based on the Auger nonradiative recombination mechanism.By fitting it with the experimental data,the results show that the efficiency droop can be ascribed to the Auger recombination and the resulting hot...

关 键 词：INGAN LED 量子效率 非辐射复合 俄歇复合 大功率LED驱动 

分 类 号：TN312.8[电子电信—物理电子学]