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INGAN: 作品数：351被引量：374H指数：9; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李国强郝跃王文樑赵德刚张进成更多>>; 相关机构：中国科学院华南理工大学西安电子科技大学北京大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划江苏省自然科学基金更多>>

Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect: 《Light(Science & Applications)》2025年第2期307-332,共26页Zhiyuan Liu Haicheng Cao Xiao Tang Tingang Liu Yi Lu Zixian Jiang Na Xiao Xiaohang Li; The authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01,Transition Award in Semiconductors,Award No.FCC/1/5939,OpportunityFundURF/1/5557-01-01.; The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications,especially in tiny micro-displays such as ARVR.However,the conventional pixel definition based on plasma etc...; 关键词：plasma etching mesa sidewallsleading sidewall effect pixel definition advanced technologies reduction efficiency

Si基InGaN可见光器件研究进展: 《金属世界》2025年第1期13-24,共12页刘力玮肖嘉滢文灿周楚翘曹怡诺林正梁李彤彤闫梓欣王文樑; 国家级大学生创新创业训练计划资助项目(202410561010)。; Si基InGaN材料因其高电子迁移率,高抗辐射,带隙可调等光电特性,在可见光通信领域展现出良好的潜力。但其发展依旧面临着材料位错密度高、器件性能差及集成度低等问题。为了解决上述问题,研究人员在材料性能,器件设计与集成等方面开展系...; 关键词：可见光通信器件研究位错密度器件性能器件结构 INGAN 器件设计光电特性

Scalable InGaN nanowireμ-LEDs:paving the way for next-generation display technology: 《National Science Review》2025年第1期297-316,共20页Vignesh Veeramuthu Sung-Un Kim Sang-Wook Lee R.Navamathavan Bagavath Chandran Dae-Young Um Jeong-Kyun Oh Min-Seok Lee Yong-Ho Kim Cheul-Ro Lee Yong-Ho Ra; supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(RS202400358275 and RS202400354960);in part by the Korea Institute of Ceramic Engineering&Technology under Grant(1415181794);by research funds for newly appointed professors of Jeonbuk National University in 2021.; Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays,from micro-electronic displays to large video wall...; 关键词：GaN multi-quantum well NANOWIRE micro LED display AR/VR/MR

可见光通信核心芯片技术研究: 《信息通信技术》2024年第6期30-37,共8页王文樑李国强; 国家重点研发计划基金资助项目(No.2022YFB3604500,No.2022YFB3604501)。; 可见光通信技术为解决无线网络频谱资源短缺、电磁干扰等问题提供了新手段,是下一代移动通信的重要备选技术。然而,有限的可见光通信芯片性能严重制约了可见光通信系统的发展。文章从通信及照明两用LED与InGaN可见光探测芯片两种核心芯...; 关键词：可见光通信通照两用LED InGaN可见光探测芯片

具有组分渐变量子垒层的氮极性InGaN基红光LED仿真研究: 《发光学报》2024年第12期2037-2044,共8页纪泽婷邓高强王昱森于佳琪左长财高浩哲段彬张宝林张源涛; 国家重点研发计划(2022YFB3605205,2021YFB3601000,2021YFB3601002);国家自然科学基金(U22A20134,62104078,62074069,62474080,62104079);吉林省科技发展计划(20220201065GX,202402002,20230101053JC,20220101119JC)。; 基于Ⅲ族氮化物材料的Micro LED显示亟需高性能的InGaN基红光LED。本工作利用极化工程构建了组分渐变InGaN作为最后量子垒层(Last quantum barrier,LQB)的氮极性InGaN基红光LED。数值模拟研究表明,氮极性InGaN基LED中相反的极化电场可...; 关键词：INGAN 极化工程红光LED

Etching-free pixel definition in InGaN green micro-LEDs: 《Light(Science & Applications)》2024年第8期1655-1665,共11页Zhiyuan Liu Yi Lu Haicheng Cao Glen Isaac Maciel Garcia Tingang Liu Xiao Tang Na Xiao Raul Aguileta Vazquez Mingtao Nong Xiaohang Li; support of KAUST Baseline Fund BAS/1/1664-01-01,KAUST Competitive Research Grants URF/1/3437-01-01,URF/1/3771-01-01;KAUST Near-term Grand Challenge Fund REI/1/4999-01-01;KAUST Impact Acceleration Fund REI/1/5124-01-01.; The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage.Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage,sig...; 关键词：ANNEALING protective QUANTUM

InGaN基蓝光激光器p型覆盖层和波导层优化: 《厦门大学学报（自然科学版）》2024年第4期595-602,共8页马雯翟智超李书平; 国家重点研发计划(2016YFB0400801,2016YFB0400800)。; [目的]为了进一步提升蓝光激光器的性能,基于实验样品结构,研究了p型覆盖层和波导层对InGaN基边发射蓝光激光器性能的综合影响.[方法]将p型覆盖层优化为多层Al组分渐变的结构,以降低p型覆盖层与电子阻挡层的Al组分差值;优化波导层的In...; 关键词：蓝光激光器 InGaN基 p型覆盖层线性渐变波导层光限制因子

光驱动Rh/InGaN_(1-x)O_(x)纳米组装体甲烷干重整制合成气: 《Science Bulletin》2024年第10期1400-1409,共10页李亦昕李景林俞天奇邱亮 Syed M.Najib Hasan 姚琳潘虎 Shamsul Arafin Sharif Md.Sadaf 朱磊周宝文; supported by the National Natural Science Foundation of China(22109095);the Oceanic Interdisciplinary Program of Shanghai Jiao Tong University(SL2022MS007);Shanghai Pilot Program for Basic Research-Shanghai Jiao Tong University(21TQ1400207);the National Key Research and Development Program of China(2023YFB4004900);Shanghai Municipal Science and Technology Major Project;supported by the Natural Sciences and Engineering Research Council of Canada(NSERC)-RGPIN-2021-04250;Centre Energie,Matériaux et Télécommunications,Institut National de la Recherche Scientifique(INRS)-Universitédu Québec.; Light-driven dry reforming of methane toward syngas presents a proper solution for alleviating climate change and for the sustainable supply of transportation fuels and chemicals.Herein,Rh/InGaN_(1-x)O_(x) nanowires s...; 关键词：Dry reforming of methane Photo-thermal catalysis Rh/InGaN_(1-x)O_(x)nanowires

Correction to:Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short: 《Nano-Micro Letters》2024年第4期432-432,共1页Tao Yang Yan‑Hui Chen Ya‑Chao Wang Wei Ou Lei‑Ying Ying Yang Mei Ai‑Qin Tian Jian‑Ping Liu Hao‑Chung Kuo Bao‑Ping Zhang; Correction to:Nano-Micro Lett.(2023)15:223 https://doi.org/10.1007/s40820-023-01189-0 In this article the author’s name“Hao-Chung Kuo”was incorrectly written as“Hao-Chung Guo”.And in the last sentence of the firs...; 关键词：And HAS SENTENCE

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers被引量：1: 《Optoelectronics Letters》2024年第2期89-93,共5页SANG Xien XU Yuan YIN Mengshuang WANG Fang LIOU Juin J LIU Yuhuai; supported by the National Natural Science Foundation of China(No.62174148);the National Key Research and Development Program(Nos.2022YFE0112000 and 2016YFE0118400);the Key Program for International Joint Research of Henan Province(No.231111520300);the Ningbo Major Project of‘Science,Technology and Innovation 2025’(No.2019B10129);the Zhengzhou 1125 Innovation Project(No.ZZ2018-45)。; To improve the internal quantum efficiency(IQE)and light output power of In Ga N light-emitting diodes(LEDs),we proposed an In-composition gradient increase and decrease In Ga N quantum barrier structure.Through analy...; 关键词：DIODES QUANTUM GRADIENT

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