具有组分渐变量子垒层的氮极性InGaN基红光LED仿真研究  

Simulation on Nitrogen-polar InGaN-based Red Light-emitting Diodes with Compositionally Graded Quantum Barrier Layer

作　　者：纪泽婷 邓高强[1] 王昱森 于佳琪 左长财 高浩哲 段彬[2] 张宝林[1] 张源涛[1] JI Zeting;DENG Gaoqiang;WANG Yusen;YU Jiaqi;ZUO Changcai;GAO Haozhe;DUAN Bin;ZHANG Baolin;ZHANG Yuantao(State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;College of Physics,Jilin University,Changchun 130012,China)

机构地区：[1]吉林大学电子科学与工程学院,集成光电子学国家重点联合实验室,吉林长春130012 [2]吉林大学物理学院,吉林长春130012

出　　处：《发光学报》2024年第12期2037-2044,共8页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2022YFB3605205,2021YFB3601000,2021YFB3601002);国家自然科学基金(U22A20134,62104078,62074069,62474080,62104079);吉林省科技发展计划(20220201065GX,202402002,20230101053JC,20220101119JC)。

摘　　要：基于Ⅲ族氮化物材料的Micro LED显示亟需高性能的InGaN基红光LED。本工作利用极化工程构建了组分渐变InGaN作为最后量子垒层(Last quantum barrier,LQB)的氮极性InGaN基红光LED。数值模拟研究表明,氮极性InGaN基LED中相反的极化电场可有效增强量子阱对载流子的限制能力,并降低器件开启电压。重要的是,氮极性InGaN基LED中,组分渐变InGaN LQB层和p-GaN界面处会同时形成电子和空穴势阱,从而形成高效的辐射发光,进而有效提升InGaN基红光LED的发光性能。本工作为高效InGaN基红光LED结构设计和器件制备提供了新思路。High-performance InGaN-based red LEDs are urgently required for Micro LED displays based onⅢ-ni-tride materials.In this work,we use polarization engineering to construct a nitrogen-polar(N-polar)InGaN-based red LED with a compositionally graded InGaN layer as the last quantum barrier(LQB)layer.The numerical simula-tion results show that the opposite polarization electric field in N-polar nitride materials effectively enhances the con-finement of carriers in the quantum well and reduces the turn-on voltage of device.Importantly,the interface be-tween the compositionally graded InGaN LQB and p-GaN simultaneously forms electron and hole potential wells,en-abling efficient radiative recombination and thus significantly improving the luminous performance of InGaN-based red LEDs.This work provides a new approach for the design and fabrication of efficient InGaN-based red LEDs.

关 键 词：INGAN 极化工程 红光LED 

分 类 号：TN312.8[电子电信—物理电子学]