半绝缘GaAs倍频效应的研究  

Research on the double-frequency effect of semi-insulating GaAs

作　　者：刘秀环[1] 陈占国[1] 贾刚[1] 时宝[1] 

机构地区：[1]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《红外与激光工程》2007年第z1期378-381,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金资助项目(60476027)

摘　　要：理论研究了GaAs的倍频效应,当基频光电场的偏振方向沿[111]方向时,倍频效应最显著;当基频光垂直于半球形GaAs样品的(001)底面入射时,产生的二次谐波沿(001)面传播。首次从光电流随基频光偏振方向的变化这一角度验证了波长为1.3μm的基频光沿GaAs晶体的[001]方向入射时的倍频吸收各向异性理论;实验测得了样品的光电流随外加偏压的非线性变化关系,实验中没有观察到光电流随外加偏压的增加而饱和的现象,进一步证明了GaAs样品中产生了倍频吸收。The double-frequency effect in GaAs single crystal is studied theoretically,and it is found to be the most significant when the fundamental optical field is along [111] direction;the second-harmonic will radiate parallel to the(001) plane when the incident light is propagating perpendicularly to the(001) bottom of the GaAs sample.The double-frequency absorption(DFA) in the semi-insulating GaAs sample is confirmed by the dependence of the photocurrent on the azimuth in agreement with the anisotropy of DFA in GaAs single crystal,the photocurrent nonlinearly dependent on the bias and no saturation with the bias.

关 键 词：半绝缘GAAS 双光子响应 倍频吸收 

分 类 号：O437[机械工程—光学工程] O472[理学—光学]