长脉冲高能激光与半导体材料的热作用分析  

Analyse on the thermal interaction of the long pulse high power laser and semiconductor

作　　者：丁玮环[1] 张梁[1] 沈中华[1] 陆建[1] 倪晓武[1] 

机构地区：[1]南京理工大学理学院,江苏南京210094

出　　处：《红外与激光工程》2007年第z1期600-603,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金资助项目(60208004);南京理工大学青年学者基金资助项目(Njust200503)

摘　　要：在入射激光光斑半径远远大于材料热扩散长度的条件下,应用固体热传导理论,使用有限元方法建立了相关模型。对长脉冲(脉宽1 ms)强激光与半导体材料Si和Ge的热作用进行了分析,定量地描绘出了材料的温度分布,得到了不同能量激光辐照下靶材前、后表面中心点温度历史,以及不同能量激光辐照下的靶材后表面的温度分布情况。所得结果为高能量激光的应用提供了依据。Under the conditions of radius of the incident laser beam is much larger than the thermal diffusivity of the materials,the model has been established with the heat transfer theory and the finite element method.Analyze has been made out on the thermal interaction of long pulse laser and semiconductor Si and Ge.The history of temperature at the central point of front surface and bank surface is obtained as well as the temperature distribution of the back surface,which are of importance to the research on the interaction mechanism of the laser beam and semiconductor material.

关 键 词：ms脉冲激光 热传导方程 潜热 

分 类 号：O532+.25[理学—等离子体物理]