硅发光研究进展  

Development of Silicon Luminescence

作　　者：叶好华[1] 叶志镇[1] 黄靖云[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《半导体光电》2002年第1期4-7,共4页Semiconductor Optoelectronics

基　　金：国家科技部攀登计划项目 (2 0 0 0 - 0 2 6 )

摘　　要：硅是间接带隙半导体 ,不能有效地发光。量子理论、超晶格理论和纳米技术的发展 ,给硅基发光研究提供了理论的和技术的支撑。研究者通过不同的途径去实现硅的有效发光 :多孔硅、纳米硅、Si/SiO2 超晶格、计算化设计与硅晶格匹配的直接带隙半导体。Silicon is an indirect bandgap semiconductor emitting light inefficiently. The progress of quantum theory, superlattice theory and nano scale technology afford theoretical and technical support for the research on silicon based luminescence. Researchers are trying to make silicon emit light effectively by various means such as porous silicon, nanosilicon, Si/SiO 2 superlattice and computational design of direct bandgap semiconductors lattice matched with silicon. Recent advances in these aspects are summarized in this paper.

关 键 词：硅发光 多孔硅 纳米硅 超晶格 

分 类 号：TN304.12[电子电信—物理电子学]