低能电子光刻的蒙特卡罗模拟  

Monte Carlo simulation for low-energy electron lithography

作　　者：张增明[1] 肖沛[1] 陈套[1] 孙霞[1] 丁泽军[1] 

机构地区：[1]中国科技大学,天文与应用物理系,合肥,230026,中国 中国科技大学,物理系,合肥,230026,中国 中国科技大学,物理系,合肥,230026,中国 中国科技大学,物理系,合肥,230026,中国 中国科技大学,物理系,合肥,230026,中国

出　　处：《现代科学仪器》2006年第z1期14-15,共2页Modern Scientific Instruments

基　　金：This work is supported by the National Natural Science Foundation of China(Grant Nos.10574121,90206009and90406024),Natural Science Foundation of Anhui Province of China(Grant No.05021015)and Elitist Foundation of Anhui Province(Granted No.2001Z016).

摘　　要：　　Electron beam lithography(EBL)has been playing an important role in the fabrication of large-scale integrated semiconductor devices because of its high resolution.Although high-energy electrons are widely employed in the present EBL system,high-energy electrons can penetrate through the resist layer,lose most of their energies in the substrate and,thus,cause damage to the underlying substrate.……

分 类 号：TH7[机械工程—仪器科学与技术]