This work is supported by the National Natural Science Foundation of China(Grant Nos.10574121,10025420 and 90206009).
Simulation of Auger electron image contrast formation is helpful for analyzing the images in scanning Auger microscopy/microanalysis(SAM),which provides elemental and chemical composition of surface and,thus,appli...
This work is supported by the National Natural Science Foundation of China(Grant Nos.10574121,90206009and90406024),Natural Science Foundation of Anhui Province of China(Grant No.05021015)and Elitist Foundation of Anhui Province(Granted No.2001Z016).
Electron beam lithography(EBL)has been playing an important role in the fabrication of large-scale integrated semiconductor devices because of its high resolution.Although high-energy electrons are widely employed...