电子束光刻中邻近效应校正的几种方法  

Methods of proximity effect correction in electron beam lithography

作　　者：肖沛[1] 孙霞[1] 闫继红[2] 丁泽军[1] 

机构地区：[1]中国科技大学结构分析重点实验室物理系,安徽合肥230026 [2]合肥学院数学与物理系,安徽合肥230026

出　　处：《电子显微学报》2005年第5期464-468,共5页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.60306006;10025420;90206009);安徽省自然科学基金(No.050460201)~~

摘　　要：本文简要介绍了限制电子束光刻分辨率的主要因素之一—邻近效应的产生机制,列举了校正邻近效应的GHOST法、图形区密集度分布法和掩模图形形状改变法,介绍了每种方法的原理、步骤和效果,比较了它们各自的优缺点。Proximity effect is one of the most important limitations to the resolution of electron beam lithography. The mechanism of proximity effect was introduced. Some correction methods of proximity effect such as GHOST, pattern area density map and shape modification were described in detail, including its principle, correction procedure and efficiency. The advantages and shortages of these methods were also given.

关 键 词：电子束光刻 邻近效应 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN405.98