电子束光刻的邻近效应及其模拟  

Simulation of the proximity effect of electron beam lithography

作　　者：孙霞[1] 尤四方[1] 肖沛[1] 丁泽军[1] 

机构地区：[1]中国科学技术大学

出　　处：《物理学报》2006年第1期148-154,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60306006;10025420;90206009)资助的课题~~

摘　　要：用MonteCarlo方法模拟和分析了电子束光刻中限制其分辨率的主要因素———邻近效应的影响.分析了入射电子束的形状、入射电子的能量、衬底材料和厚度对邻近效应大小的影响,并与实验结果进行了比较,发现模拟结果与实验结果符合得很好.分析表明高斯分布的电子束比理想电子束的邻近效应大;衬底原子序数越大,衬底越厚,入射电子束能量越低,邻近效应越大.Electron beam lithography has high sensitivity since it is free from limitation from diffraction effect. It will be the mostcommon technique of the next generation lithography to replace the conventional optical lithography. The proximity effect is the most important limitation of the sensitivity of lithography, which is simulated with Monte Carlo method in this paper. The influence on proximity effect of the shape and energy of electron beam and the material and depth of substrate is analyzed. The simulation results are compared with the experimental data and are found to fit well. It is found that, the proximity effect shown by Gaussian shaped electron beam is much larger than that by ideal electron beam, and lager atomic number, thicker substrate and lower energy of the electron beam will cause lager proximity effect independently.

关 键 词：电子束光刻 邻近效应 MONTE Carlo 

分 类 号：TN305[电子电信—物理电子学]