BiVO_4对Ta改性Ba_3Ti_5Nb_6O_(28)陶瓷烧结和介电性能的影响  

Effects of BiVO4 on the sintering behavior and dielectric properties of Ta modified Ba_3Ti_5Nb_6O_(28) ceramics

作　　者：郑兴华[1] 林佳[1] 梁炳亮[1] 汤德平[1] 刘旭俐[1] 

机构地区：[1]福州大学材料科学与工程学院,福建福州350108

出　　处：《电子元件与材料》2010年第7期12-15,共4页Electronic Components And Materials

基　　金：福建省高等学校新世纪优秀人才支持计划资助项目(No.XSJRC2007-16);福建省发改委项目;福州大学发展基金资助项目(No.2007-XQ-01)

摘　　要：采用传统固相反应法制备了BiVO_4掺杂的Ba_3Ti_5Nb_(5.84)Ta_(0.16)O_(28)陶瓷,研究了所制陶瓷的烧结性能、介电性能以及结构。BiVO_4的添加使Ba_3Ti_5Nb_(5.84)Ta_(0.16)O_(28)陶瓷的烧结温度从1275℃显著降低到了900℃,介电常数及介电损耗略有提高。其中,掺杂有5.0%(质量分数)BiVO_4的Ba_3Ti_5Nb_(5.84)Ta_(0.16)O_(28)陶瓷在950℃保温烧结3h后具有较好的微波介电性能:ε_r=31.5,Q·f=4338GHz,τf=36.2×10^(–6)/℃。BiVO4 doped Ba3Ti5Nb5.84Ta0.16O28 ceramics were prepared by the traditional solid state method. The effects of BiVO4 doping on the sintering properties, dielectric properties and structure of the Ba3Ti5Nb5.84Ta0.16O28 ceramics were investigated. The results show that BiVO4 addition decreases the sintering temperature of the Ba3Ti5Nb5.84Ta0.16O28 ceramics significantly from 1 275 ℃ to 900 ℃, while slightly increases the dielectric constant and dielectric loss. Compared with other samples, the Ba3Ti5Nb5.84Ta0...

关 键 词：无机非金属材料 微波介质陶瓷 介电性能 BiVO_4 LTCC 

分 类 号：TQ174.1[化学工程—陶瓷工业]