Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation  

作　　者：王基庆 陈平平 李志锋 郭旭光 H.Makino T.Yao 陈弘 黄绮 周均铭 陆卫 

机构地区：[1]National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China [2]National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China Institute for Materials Research, Tohoku University, Sendai, Japan [3]Institute for Materials Research, Tohoku University, Sendai, Japan [4]Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2003年第5期474-480,共7页中国科学：物理学、力学、天文学（英文版）

摘　　要：This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photoluminescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnetism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN.This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photoluminescence. the results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnetism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN.

关 键 词：DILUTED MAGNETIC semiconductor  CURIE temperature  SQUID. 

分 类 号：O472[理学—半导体物理]