氧化锌半导体薄膜在原子氧探测中的应用  

ZnO film preparation and its application in atomic oxygen (AO) sensing

作　　者：王云飞[1] 陈学康[1] 王兰喜[1] 李中华[1] 杨生胜[1] 郑阔海[1] 冯展祖[1] 高欣[1] 

机构地区：[1]兰州物理研究所真空低温技术与物理国家重点实验室,兰州730000

出　　处：《航天器环境工程》2009年第2期114-117,97,共4页Spacecraft Environment Engineering

基　　金：真空低温技术与物理国家重点实验室基金项目(项目编号:9140C5505010605)

摘　　要：氧化锌半导体薄膜是用于空间原子氧探测的一种敏感材料。采用脉冲激光沉积方法(PLD)在(001)取向的蓝宝石基底上制备出了高质量的氧化锌薄膜,并在地面原子氧模拟设备中考察了其原子氧敏感特性。结果表明,氧化锌薄膜对原子氧有较好的敏感特性,并且在受热后导电性能可以恢复,满足重复探测的要求。High-quality ZnO thin films on C-axis sapphire (Al2O3) substrates were prepared by pulse laser deposition (PLD). The application of the films to AO sensing is investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nano ZnO film decreases with the extent of AO exposure, and the conductance of the film can be recovered by heating for repeated use.

关 键 词：氧化锌薄膜 制备 原子氧 探测 

分 类 号：V416.5[航空宇航科学与技术—航空宇航推进理论与工程] TQ132.4+1[化学工程—无机化工]