沉积温度对一氧化硅薄膜聚集密度的影响  

Title Influence of Deposited Temperature on Packing Density of SiO Thin Films

作　　者：罗海瀚[1,2] 刘定权[1] 尹欣[1,2] 蔡渊[1] 张莉[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]中国科学院研究生院,北京100049

出　　处：《光子学报》2012年第2期170-172,共3页Acta Photonica Sinica

摘　　要：一氧化硅(SiO)薄膜是中短波红外区最常用的光学薄膜之一,高的聚集密度对于提升光谱稳定性和光学薄膜元件的品质非常重要.选用纯度为99.99%的SiO块状材料,在5×10-4 Pa背景真空中用钼舟蒸发沉积,石英晶振仪将沉积速率控制在1.2～1.5nm/s范围,硅基片上的膜层厚度约为2.2～2.4μm,在不同沉积温度下制备样品.用傅里叶红外光谱仪分别测试新鲜薄膜和充分浸湿薄膜的光谱曲线,根据波长漂移理论,计算出薄膜的聚集密度.结果表明:聚集密度随沉积温度的升高而增加,从常温沉积的约0.91上升到250℃沉积的0.99以上.Silicon monoxide(SiO) thin films is one of the most commonly used optical film in short-wave and medium-wave infrared.High packing density for enhancing the spectra stability and the quality of the optical thin film elements is extremely important.Used 99.99% purity of the SiO bulk materials,SiO thin films were prepared by molybdenum boat thermal evaporation in 5×10-4 Pa vacuum pressure at different deposited temperature,while deposition rate was monitored and demonstrated at 1.2~1.5 nm/s by quartz crystal oscillation controller.The thickness of the thin films on silicon substrate is about 2.2~2.4 μm.Used the Fourier transform infrared spectrometer to test the spectral characteristics of SiO thin films before and after the thin film suck tide,and according to the wavelength deviation dispersion theory,calculated the packing density.The results show that as the deposition temperature increased,the packing density increased,from 0.91 at room temperature to 0.99 at 250 ℃.

关 键 词：光学薄膜 聚集密度 一氧化硅 沉积温度 

分 类 号：O484.4[理学—固体物理]