大面积高深宽比硅微通道板阵列制作  

Fabrication of Silicon-based Micro Pore Array with Large-area and High Aspect-ratio by Photo-electrochemical Etching

作　　者：吕文峰[1] 周彬[1] 罗建东[1] 郭金川[1] 

机构地区：[1]深圳大学光电子学研究所教育部和广东省光电子器件与系统重点实验室,广东深圳518060

出　　处：《光子学报》2012年第2期228-231,共4页Acta Photonica Sinica

基　　金：国家自然科学基金项目(No.11074172);深圳市科技研发资金重点实验室提升项目(No.CXB201005240011A);深圳市科技计划基础研究重点项目(No.JC200903130326A)资助

摘　　要：利用光辅助电化学刻蚀方法,在厚度为425μm的5英寸硅片上,制作成深宽比达50以上的微通道板阵列结构.理论分析了影响微孔阵列形貌形成的关键因素,并结合实验条件,通过调整刻蚀电压值和根据莱曼模型修正实验电流值得到理想的孔壁形貌.结果表明,相比于目前在硅基上制作高深宽微结构的几种技术,光辅助电化学刻蚀方法能够实现孔壁光滑、面积大和深宽比高的微通道板阵列结构的低成本制作.The micro pore array with the feature of aspect ratio of more than 50 was fabricated on a 5-inch silicon wafer by means of photo-assisted electrochemical etching technique.After analyzing the factors that determine the morphology of pores,the following experiments were proceeded to study the relation of pore morphology to the etching voltage and electric current.When choosing a current by i-V curve,several different etching voltages were applied respectively and corresponding wafer was fabricated by adjusting experimental parameters according to the Lehmann′s model.It was found that the better pores could be produced under a voltage of 2 V.The results show that photo-assisted electrochemical etching technique can be more adopted to make the large area micro-pore array of high aspect-ratio on silicon wafer with low cost,being compared to the state of the art of micro-manufacturing technology.

关 键 词：微制作 光辅助电化学刻蚀 深宽比 微通道板 

分 类 号：TN223[电子电信—物理电子学]