基于薄膜工艺的X波段下变频器设计  

Design of an X-band Downcoverter Manufactured by Thin-film Processing

作　　者：赵岩[1] 敬守钊[1] 王韧 

机构地区：[1]电子科技大学,成都611731 [2]成都亚光电子股份有限公司,成都610051

出　　处：《无线通信技术》2011年第4期33-38,42,共7页Wireless Communication Technology

摘　　要：本文介绍了一个基于薄膜电路工艺设计、加工的X波段下变频器。首先对整体方案进行分析论证,然后运用安捷伦公司的ADS仿真设计软件,对射频及中频滤波器、朗格电桥、低噪声放大器和混频器等电路单元及变频器系统进行了仿真设计。最后经过加工测试验证,该变频器性能指标良好。其工作频率为9.35GHz-9.85GHz,变频增益≥26dB,噪声系数≤2dB,Po1dB压缩点功率≥10dBm,输入、输出驻波≤1.3,镜像抑制比≥50dB;本振输入为0±1dBm。整个电路腔体结构尺寸为70mm×20mm×10mm。An X-band downconverter based on thin-film processing is designed and manufactured in this paper.First,analysis and appraisal of the system total solution are discussed.Then the Agilent ADS microwave software is used to simulate the system performance.The RF and IF filter、Lange bridge、 LNA and Mixer are designed respectively.Test results show that the designed downconverter can achieves a good performance,with the RF frequency of 9.35 GHz-9.85 GHz,the gain greater than 26dB,the noise figure less than 2dB,the output power for 1dB compression greater than 10dBm,the input and output VSWR less than 1.3,the image rejection greater than 50dB,the LO input of 0±1dBm and the final size of the Circuit cavity of 70mm×20mm×10mm.

关 键 词：下变频器 薄膜混合集成 低噪声放大器 混频器 

分 类 号：TN773.4[电子电信—电路与系统]