Epitaxial Techniques for Compound Semiconductor Growth:from LPE to MOVPE  

作　　者：李长荣 杜振民 罗德贵 张维敬 

机构地区：[1]School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

出　　处：《Rare Metals》2000年第2期81-86,共6页稀有金属（英文版）

基　　金：ThisworkissupportedbyNationalAdvancedMaterialsCommitteeofChina .

摘　　要：The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly have many applications.The process characteristics and crystalline properties of both LPE and MOVPE techniques were introduced briefly, the compositional space suitable for LPE and MOVPE growth was discussed from the view point of thermodynamic equilibrium. The analysis and comparison show that on the one hand LPE and MOVPE have some advantages and characteristics in common; on the other hand, they may overcome each other′s weaknesses and deficiencies by offering their own special features.The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly have many applications.The process characteristics and crystalline properties of both LPE and MOVPE techniques were introduced briefly, the compositional space suitable for LPE and MOVPE growth was discussed from the view point of thermodynamic equilibrium. The analysis and comparison show that on the one hand LPE and MOVPE have some advantages and characteristics in common; on the other hand, they may overcome each other′s weaknesses and deficiencies by offering their own special features.

关 键 词：Ⅲ-Ⅴ semiconductors LPE MOVPE Thermodynamic analysis 

分 类 号：TN304.054[电子电信—物理电子学]