Crystal Perfection in GaP Films Heteroepitaxially Grown on GaAs by Low-pressure Metalorganic Chemical Vapor Deposition  

作　　者：张兆春 潘教清 崔得良 孔祥贵 秦晓燕 黄柏标 蒋民华 

机构地区：[1]Institute of Crystal Materials,Shandong University,Jinan 250100,China Laboratory of Excited State Processes,Chinese Academy of Sciences,Changchun 130021,China

出　　处：《Rare Metals》2000年第2期87-90,共4页稀有金属（英文版）

基　　金：ThisprojectissupportedbytheNationalNaturalScienceFoundationofChina(contractNo .5982 30 0 3)andtheKeyLaboratoryofExcitedStatePr

摘　　要：The crystal perfection in GaP epitaxial layers was stuided by the use of double crystal X ray diffraction,backscattering spectrometry and Raman scattering techniques.GaP films grown on GaAs by low pressure metalorganic chemical vapor deposition were used as the samples.By means of the morphology and the full width at half maximum of X ray diffraction peak for the GaP epilayers,the growth temperature and Ⅴ/Ⅲ ratio were optimized.In addition,the residual stress and strain of a GaP epilayer were calculated,based on Raman scattering measurement.The crystal perfection in GaP epitaxial layers was stuided by the use of double crystal X ray diffraction,backscattering spectrometry and Raman scattering techniques.GaP films grown on GaAs by low pressure metalorganic chemical vapor deposition were used as the samples.By means of the morphology and the full width at half maximum of X ray diffraction peak for the GaP epilayers,the growth temperature and Ⅴ/Ⅲ ratio were optimized.In addition,the residual stress and strain of a GaP epilayer were calculated,based on Raman scattering measurement.

关 键 词：GAP HETEROEPITAXY Raman spectroscopy Backscattering spectrometry 

分 类 号：TN304.055[电子电信—物理电子学]