HETEROEPITAXY

作品数：39被引量：36H指数：3
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相关机构：中国科学院更多>>
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Recent progress on heteroepitaxial growth of single crystal diamond films
《Electron》2024年第4期48-71,共24页Vedaste Uwihoreye Yushuo Hu Guangyu Cao Xing Zhang Freddy E.Oropeza Kelvin H.L.Zhang 
Research and Development of Single Crystal Diamond Semiconductors and Device Technologies,Grant/Award Number:20233160A0738;National Natural Science Foundation of China,Grant/Award Number:22275154。
Diamond is an ultimate semiconductor with exceptional physical and chemical properties,such as an ultra‐wide bandgap,excellent carrier mobility,extreme thermal conductivity,and stability,making it highly desirable fo...
关键词：DIAMOND HETEROEPITAXY SEMICONDUCTORS thin films ultra‐wide bandgap 
Step-edge-guided nucleation and growth mode transition of α-Ga_(2)O_(3) heteroepitaxy on vicinal sapphire
《Chinese Physics B》2024年第8期397-403,共7页郝景刚 张彦芳 张贻俊 徐科 韩根全 叶建东 
Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3605403);the National Natural Science Foundation of China (Grant Nos.62234007,62241407,62293521,62304238,62241407,U21A20503,and U21A2071);the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2020B010174002);the Cultivation Project for Youth Teachers in Jiangsu Province;Jiangsu Funding Program for Excellent Postdoctoral Talent。
Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by ...
关键词：growth mode miscut angle crystalline quality surface morphology 
Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride
《Nano Research》2024年第4期3224-3231,共8页Jidong Huang Jingren Chen Junhua Meng Siyu Zhang Ji Jiang Jingzhen Li Libin Zeng Zhigang Yin Jinliang Wu Xingwang Zhang 
supported by the National Natural Science Foundation of China(Nos.62274151 and 61874106);the Natural Science Foundation of Beijing Municipality(No.4212045);the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB43000000).
As a very promising epitaxy technology,the remote epitaxy has attracted extensive attention in recent years,in which graphene is the most used interlayer material.As an isomorphic of graphene,two-dimensional(2D)hexago...
关键词：remote epitaxy hexagonal boron nitride transition metal dichalcogenides chemical vapor deposition PHOTODETECTORS 
Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review被引量：1
《National Science Open》2023年第4期86-102,共17页Zhetong Liu Bingyao Liu Zhaolong Chen Shenyuan Yang Zhiqiang Liu Tongbo Wei Peng Gao Zhongfan Liu 
The work was supported by the National Key R&D Program of China(2019YFA0708200);the National Natural Science Foundation of China(T2188101,52125307,52021006 and 12074369);the“2011 Program”from the Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter,Youth Innovation Promotion Association,CAS;the Youth Supporting Program of Institute of Semiconductors.
Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication.However,the lattice and thermal expansion coefficient mismatches between epilayers and substrate...
关键词：GRAPHENE 2D materials HETEROEPITAXY remote epitaxy pinhole epitaxy van der Waals epitaxy 
High performance solar-blind deep ultraviolet photodetectors viaβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single crystalline film
《Chinese Physics B》2023年第9期559-565,共7页王必成 汤梓荧 郑湖颖 王立胜 王亚琪 王润晨 丘志仁 朱海 
the National Natural Science Foundation of China(Grant Nos.U22A2073,11974433,91833301,and 11974122)。
We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the...
关键词：deep ultraviolet FILM PHOTODETECTOR HETEROEPITAXY 
Realization of Oriented and Nanoporous Bismuth Chalcogenide Layers via Topochemical Heteroepitaxy for Flexible Gas Sensors
《Research》2022年第4期211-221,共11页Zhiwei Wang Jie Dai Jian Wang Xinzhe Li Chengjie Pei Yanlei Liu Jiaxu Yan Lin Wang Shaozhou Li Hai Li Xiaoshan Wang Xiao Huang Wei Huang 
This work was supported by the National Key Basic Research Program of China(grant no.:2021YFB3200302);the National Natural Science Foundation of China(grant nos.:51832001 and 52102114);the Fundamental Research Funds for the Central Universities of China,the Joint Research Funds of Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University(grant nos.:2020GXLH-Z-026 and 2020GXLH-Z-027);the China Postdoctoral Science Foundation(grant nos.:2021M692618 and 2021M702657);the Natural Science Foundation of Shaanxi Province(2021JQ-112).
Most van der Waals two-dimensional(2D)materials without surface dangling bonds show limited surface activities except for their edge sites.Ultrathin Bi_(2)Se_(3),a topological insulator that behaves metal-like under a...
关键词：chemical BONDS ROUGHNESS 
Growth and characterization ofβ-Ga_(2)O_(3)thin films grown on off-angled Al_(2)O_(3)substrates by metal-organic chemical vapor deposition被引量：4
《Journal of Semiconductors》2022年第9期68-73,共6页Yabao Zhang Jun Zheng Peipei Ma Xueyi Zheng Zhi Liu Yuhua Zuo Chuanbo Li Buwen Cheng 
the National Key Research and Development Program of China(Grant No.2018YFB2200500);the National Natural Science Foundation(Grant Nos.62050073,62090054,61975196).
Beta-gallium oxide(β-Ga_(2)O_(3))thin films were deposited on c-plane(0001)sapphire substrates with different mis-cut angles along<>by metal-organic chemical vapor deposition(MOCVD).The structural properties and surf...
关键词：β-Ga_(2)O_(3) HETEROEPITAXY mis-cut Al_(2)O_(3)substrates MOCVD 
Barium hexaferrite/muscovite heteroepitaxy with mechanically robust perpendicular magnetic anisotropy
《npj Flexible Electronics》2021年第1期277-283,共7页Wei-En Ke Pao-Wen Shao Chang-Yang Kuo Haili Song Rong Huang Naoki Yagi Tsuyoshi Kimura Yugandhar Bitla Chun-Fu Chang Ying-Hao Chu 
supported by the Ministry of Science and Technology,Taiwan(grant No.MOST 110-2634-F-009-026);the Center for Emergent Functional Matter Science of National Yang Ming Chiao Tung University from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education(MOE)in Taiwan.NY and TK were supported by JSPS KAKENHI(grant Nos.JP19H05823 and JP21H04436);Rong Huang was supported by the National Natural Science Foundation of China(Grant No.61974042).
Recent advances in the design and development of magnetic storage devices have led to an enormous interest in materials with perpendicular magnetic anisotropy(PMA)property.The past decade has witnessed a huge growth i...
关键词：FERRITE ANISOTROPY MAGNETIC 
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles被引量：3
《Science China(Physics,Mechanics & Astronomy)》2019年第12期89-95,共7页ZhiMing Shi XiaoJuan Sun YuPing Jia XinKe Liu ShanLi Zhang ZhanBin Qi DaBing Li 
supported by the National Natural Science Fund for Distinguished Young Scholars(Grant No.61725403);the Special Fund for Research on National Major Research Instruments(Grant No.61827813);the National Natural Science Foundation of China(Grant Nos.61874118,61834008,and 61804152);the Key Program of the International Partnership Program of CAS(Grant No.181722KYSB20160015);the Special Project for Inter-government Collaboration of the State Key Research and Development Program(Grant No.2016YFE0118400);the Jilin Provincial Science&Technology Department(Grant No.20180201026GX);the CAS Research and Development Project of Scientific Research Instruments and Equipment;the Youth Innovation Promotion Association of CAS;supported by the CAS Pioneer Hundred Talents Program
The high density of defects induced by large strains in largely mismatched heteroepitaxy systems, such as AlN and GaN, because of the large lattice and thermal mismatch between substrates and epilayers is the bottlene...
关键词：VAN der WAALS EPITAXY 2D materials first principles 
Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance被引量：2
《Chinese Physics B》2019年第6期105-109,共5页Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61604049);the Shenzhen Municipal Research Project(Grant No.JCYJ20160531192714636)
Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to dire...
关键词：GAN HETEROEPITAXY thermal CONDUCTIVITY TRANSIENT THERMOREFLECTANCE ULTRAVIOLET laser 
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