Funding information National Natural Science Foundation of China,Grant/Award Numbers:61974174,61904184,62174061,62174063;National Key Research and Development Program of China,Grant/Award Number:2022YFB3605104;Key Research and Development Program of Hubei Province,Grant/Award Number:2021BAA071;Key Laboratory of Infrared Imaging Materials and Detectors,the Shanghai Institute of Technical Physics,the Chinese Academy of Sciences,Grant/Award Number:IIMDKFJJ-21-07;Fundamental Research Funds for the Central Universities,Grant/Award Number.2020kfyXJJS124;Director Fund of WNLO。
In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption co...
In recent years,two-dimensional(2D)materials have attracted extensive interests due to the large exciton binding energy different from bulk materials.Many peculiar properties have been discovered that have farreaching...
Fok Ying-Tong Education Foundation,Grant/Award Number:171051;National Key R&D Program,Grant/Award Number:2020YFA0709800;National Natural Science Foundation of China,Grant/Award Numbers:U20A20168,51861145202,61874065,62022047;Beijing Natural Science Foundation,Grant/Award Number:M22020;Beijing National Research Center for Information Science and Technology Youth Innovation Fund,Grant/Award Number:BNR2021RC01007;State Key Laboratory of New Ceramic and Fine Processing Tsinghua University,Grant/Award Number:No.KF202109;The Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences;Tsinghua-Foshan Innovation Special Fund(TFISF),Grant/Award Number:2021THFS0217。
Mixed-dimensional(2D/3D)van der Waals(vdW)heterostructures made with complementary materials hold a lot of promise in the field of optoelectronic devices.Beyond simple mechanical stacking,directly growing the single-c...
An experimental characterization of the Van der Waals forces involved in volatile organic compounds (VOC) dissolved into stationary phases of gas liquid chromatography (GLC) has been started at the beginning of the se...
the National Basic Research Program of China(973 Program)under Grant No.2015CB351905;the Technology Innovative Research Team of Sichuan Province of China(No.2015TD0005);"111"project(No.B13042),China National Funds for Distinguished Young Scientists(No.61825102).
With the advent of human-friendly intelligent life,as well as increasing demands for natural and seamless humanmachine interactions,flexibility and wearability are among the inevitable development trends for electroni...
National Natural Science Foundation of China(Grant No.11672079);the National Science Foundation of Beijing(Grant No.2184130)。
PbI2/MoS2,as a typical van der Waals(vdW)heterostructure,has attracted intensive attention owing to its remarkable electronic and optoelectronic properties.In this work,the effect of defects on the electronic structur...
supported by the National Natural Science Fund for Distinguished Young Scholars(Grant No.61725403);the Special Fund for Research on National Major Research Instruments(Grant No.61827813);the National Natural Science Foundation of China(Grant Nos.61874118,61834008,and 61804152);the Key Program of the International Partnership Program of CAS(Grant No.181722KYSB20160015);the Special Project for Inter-government Collaboration of the State Key Research and Development Program(Grant No.2016YFE0118400);the Jilin Provincial Science&Technology Department(Grant No.20180201026GX);the CAS Research and Development Project of Scientific Research Instruments and Equipment;the Youth Innovation Promotion Association of CAS;supported by the CAS Pioneer Hundred Talents Program
The high density of defects induced by large strains in largely mismatched heteroepitaxy systems, such as AlN and GaN, because of the large lattice and thermal mismatch between substrates and epilayers is the bottlene...
Project supported by the National Natural Science Foundation of China(Grant No.21405109);the Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments,China(Pilt No.1710)
Graphene and transition metal dichalcogenides(TMDs), two-dimensional materials, have been investigated wildely in recent years. As a member of the TMD family, MoTe2 possesses a suitable bandgap of ~1.0 eV for near inf...
The experimental knowledge on interlayer potential of graphitic materials is summarized and compared with the computational results based on phenomenological models.Besides Lennard-Jones approximation, the Mie potenti...