EPITAXY

作品数：377被引量：339H指数：6
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Metastable seed-crystals:epitaxial growth of branched-array organic heterostructure nanowires
《Science China Chemistry》2025年第3期1035-1040,共6页Jin Feng Zhen-Yu Geng Ting-Yao Song Ying-Xin Ma Chuan-Zeng Wang Wei Zhang Hong-Tao Lin Jin Zhou Shu-Ping Zhuo Shu-Hai Chen Xue-Dong Wang 
financial support from the Natural Science Foundation of Jiangsu Province (BK20230010);the National Natural Science Foundation of China (52173177,52473314,22475122);the Natural Science Foundation of Shandong Province (ZR2020MB054);the Training Program for Excellent Young Innovators of Changsha (kq2206026);the Collaborative Innovation Center of Suzhou Nano Science&Technology。
Tunable light-matter interactions are exhibited by organic low-dimensional crystals,making these crystals a promising platform for organic photonics.However,the precise synthesis of organic low-dimensional crystals re...
关键词：metastable structure crystal growth organic heterostructure oriented epitaxy organic photonics 
Growth modes ofβ-Ga_(2)O_(3)on h-BN:Remote epitaxy and van der Waals epitaxy
《Nano Research》2025年第2期887-895,共9页Yiming Shi Junhua Meng Zhengchang Xia Jidong Huang Wenkang Liu Ji Jiang Zhigang Yin Jinxiang Deng Xingwang Zhang 
This work was financially supported by the National Natural Science Foundation of China(Nos.62174009 and 62274151).
Integrating monoclinic gallium oxide(β-Ga_(2)O_(3))with two-dimensional(2D)hexagonal boron nitride(h-BN)into heterostructures is of significant importance for achieving high-power device applications.The 2D-material-...
关键词：β-Ga_(2)O_(3) H-BN remote epitaxy van der Waals epitaxy HETEROSTRUCTURES 
Controlled van der Waals epitaxy of 2D single-crystal molecular film
《National Science Review》2024年第12期55-57,共3页Xinghui Liu Young Hee Lee 
Two-dimensional(2D)materials have garnered significant attention for their unique properties,which enable advances in both fundamental physics and next-generation electronic devices[1].However,the large-scale producti...
关键词：enable FILM ADVANCES 
Extreme sputtering:Epitaxy of multifunctional oxides heterostructures
《Journal of Advanced Ceramics》2024年第12期1919-1930,共12页Soo Young Jung Dong-Hun Han Ruiguang Ning Min-Seok Kim Hyung-Jin Choi Ho Won Jang Seung-Hyub Baek 
the National Research Foundation of Korea(NRF)grant funded by the Ministry of Science and ICT(No.NRF-2020M3D1A2101933);from Korea Institute of Science and Technology(No.2E33181);supported by Alchemist Project Program(No.RS-2024-00422061,Development of Ultimate Semiconductor by Control of Band Curvature of Ultrawide Bandgap Materials)funded by the Ministry of Trade,Industry&Energy(MOTIE,Republic of Korea).
This review provides an in-depth exploration of low-damage sputtering techniques and their importance in synthesizing high-quality epitaxial multifunctional oxide heterostructures.This review examines the factors cont...
关键词：SPUTTERING low damage ion bombardment epitaxial thin films functional oxides 
Van der Waals epitaxial growth of single-crystal molecular film
《National Science Review》2024年第11期188-196,共9页Lixin Liu Penglai Gong Kailang Liu Bingrong Huang Zhihao Zhang Yingshuang Fu Yu Wu Yinghe Zhao Meihui Wang Yongshan Xu Huiqiao Li Tianyou Zhai 
supported by the National Natural Science Foundation of China(22350003,U21A2069 and 52202171);the National Key R&D Program of China(2023YFE0210800);the Hubei Provincial Natural Science Foundation of China(2024AFA012).
Epitaxy is the cornerstone of semiconductor technology,enabling the fabrication of single-crystal film.Recent advancements in van der Waals(vdW)epitaxy have opened new avenues for producing wafer-scale single-crystal ...
关键词：van der Waals epitaxy inorganic molecular crystal layer-by-layer growth single-crystal film DIELECTRIC 
Centimeter-Scale Above-Room-Temperature Ferromagnetic Fe_(3)GaTe_(2)Thin Films by Molecular Beam Epitaxy
《Chinese Physics Letters》2024年第10期119-122,共4页Taikun Wang Yongkang Xu Yu Liu Xingze Dai Pengfei Yan Jin Wang Shuanghai Wang Yafeng Deng Kun He Caitao Li Ziang Wang Wenqin Zou Rongji Wen Yufeng Hao Liang He 
supported by the National Natural Science Foundation of China(Grant No.12241403);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20140054)。
Fe_(3)GaTe_(2),as a layered ferromagnetic material,has a Curie temperature(T_(c))higher than room temperature,making it the key material in next-generation spintronic devices.To be used in practical devices,large-size...
关键词：EPITAXY film magnetic 
Van der Waals epitaxy of type-Ⅱ band alignment CsPbI_(3)/TMDC heterostructure for optoelectronic applications
《Frontiers of physics》2024年第5期95-107,共13页Chang Lu Shunhui Zhang Meili Chen Haitao Chen Mengjian Zhu Zhengwei Zhang Jun He Lin Zhang Xiaoming Yuan 
supported by the National Natural Science Foundation of China(Grant Nos.61974166 and 62274184);the Hunan Provincial Natural Science Foundation of China(Grant Nos.2021JJ20080 and 2021JJ20077)。
Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement,thus is a promising method to form 2D/2D and 2D/3D heterojunction.Considering the unique optical properties of C...
关键词：van der Waals epitaxy band alignment growth fundamental charge transfer PHOTODETECTOR 
Recent progress of Ga_(2)O_(3)materials and devices based on the low-cost,vacuum-free Mist-CVD epitaxial growth method被引量：1
《Fundamental Research》2024年第5期1292-1305,共14页Zeyulin Zhang Pengru Yan Qingwen Song Haifeng Chen Wentao Zhang Hao Yuan Fengyu Du Dinghe Liu Dazheng Chen Yuming Zhang 
supported by the National Key R&D Program of China(2022YFB3605402);the National Natural Science Foundation of China(62274132,62004151,62274126);the Key Area R&D Program of Guangdong Province(2019B010127001,2020B010170001,2020B0909030003);the Natural Science Basic Research Program of Shaanxi under Program 2021JC-24,the Key Research and Development Program of Shaanxi(2021-GY-007);the Innovation Capability Support Program of Shaanxi(2021TD-04);the Key Research and Development Program of Shaanxi(2020ZDLGY03–07).
Compared with silicon,gallium nitride,silicon carbide,and other traditional semiconductors,gallium oxide(Ga_(2)O_(3))who possesses,an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of ...
关键词：Gallium oxide Epitaxy growth Mist-CVD Single crystals Gallium oxide devices 
Machine learning-assisted smart epitaxy ofⅢ-Ⅴsemiconductors
《Science China Materials》2024年第9期3041-3042,共2页Yue Hao 
Semiconductor epitaxial growth is the front-end process for manufacturing microelectronic and optoelectronic devices.Molecular beam epitaxy(MBE),capable of precisely controlling atomic layer deposition,has emerged as ...
关键词：OPTOELECTRONIC SMART SEMICONDUCTORS 
Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices被引量：1
《Science Bulletin》2024年第13期2080-2088,共9页Siyuan Cui Ke Sun Zhefu Liao Qianxi Zhou Leonard Jin Conglong Jin Jiahui Hu Kuo-Sheng Wen Sheng Liu Shengjun Zhou 
supported by the National Natural Science Foundation of China(52075394);the National Key R&D Program of China(2022YFB3603603 and 2021YFB3600204);the Key Research and Development Program of Hubei Province(2023BAB137);the Knowledge Innovation Program of Wuhan-Basic Research,the National Youth Talent Support Program,and the Fundamental Research Funds for the Central Universities.
III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films gr...
关键词：Flexible nanoimprint lithography BIOINSPIRED Micro-and nano-manufacturing III-nitride epitaxy Optoelectronic devices 
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