Centimeter-Scale Above-Room-Temperature Ferromagnetic Fe_(3)GaTe_(2)Thin Films by Molecular Beam Epitaxy  

作　　者：Taikun Wang Yongkang Xu Yu Liu Xingze Dai Pengfei Yan Jin Wang Shuanghai Wang Yafeng Deng Kun He Caitao Li Ziang Wang Wenqin Zou Rongji Wen Yufeng Hao Liang He 王太坤;徐永康;刘宇;代兴泽;闫鹏飞;王瑾;王双海;邓亚丰;何坤;李彩涛;王子昂;邹文琴;温荣吉;郝玉峰;何亮(School of Electronic Science and Engineering,Nanjing University,Nanjing 210000,China;National Key Laboratory of Spintronics,Nanjing University,Suzhou 215163,China;Department of Physics,Nanjing University,Nanjing 210000,China;College of Engineering and Applied Science,Nanjing University,Nanjing 210000,China)

机构地区：[1]School of Electronic Science and Engineering,Nanjing University,Nanjing 210000,China [2]National Key Laboratory of Spintronics,Nanjing University,Suzhou 215163,China [3]Department of Physics,Nanjing University,Nanjing 210000,China [4]College of Engineering and Applied Science,Nanjing University,Nanjing 210000,China

出　　处：《Chinese Physics Letters》2024年第10期119-122,共4页中国物理快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.12241403);the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20140054)。

摘　　要：Fe_(3)GaTe_(2),as a layered ferromagnetic material,has a Curie temperature(T_(c))higher than room temperature,making it the key material in next-generation spintronic devices.To be used in practical devices,large-sized high-quality Fe_(3)GaTe_(2)thin films need to be prepared.Here,the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology.Furthermore,the Tc of the samples raises as the film thickness increases,and reaches 367K when the film thickness is 60 nm.This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe_(3)GaTe_(2).

关 键 词：EPITAXY film magnetic 

分 类 号：O469[理学—凝聚态物理]