Machine learning-assisted smart epitaxy ofⅢ-Ⅴsemiconductors  

作　　者：Yue Hao 

机构地区：[1]Key Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an,710071,China

出　　处：《Science China Materials》2024年第9期3041-3042,共2页中国科学（材料科学）（英文版）

摘　　要：Semiconductor epitaxial growth is the front-end process for manufacturing microelectronic and optoelectronic devices.Molecular beam epitaxy(MBE),capable of precisely controlling atomic layer deposition,has emerged as a crucial technique in chip atomic-level manufacturing[1].However,in semiconductor epitaxy,the heterogeneous nature of materials is complicated,and the growth condition fluctuations poses significant challenges in defect suppression[2],substantially impacting chip performance and yield.

关 键 词：OPTOELECTRONIC SMART SEMICONDUCTORS 

分 类 号：TP181[自动化与计算机技术—控制理论与控制工程] TN304[自动化与计算机技术—控制科学与工程]