supported by the Outstanding Youth Foundation of Jiangsu Province of China(Grant No.BK20211548);the Yangzhou Science and Technology Plan Project(Grant No.YZ2023246)。
The integration of dual-mesoporous structures,the construction of heterojunctions,and the incorporation of highly concentrated oxygen vacancies are pivotal for advancing metal oxide-based gas sensors.Nonetheless,achie...
fundings from the National Natural Science Foundation of China(Nos.62274013 and 92163206);the National Key Research and Development Program of China(No.2023YFB3405600);Science Fund for Creative Research Groups of the National Natural Science Foundation of China(No.12321004)。
Monolithic three-dimensional(M3D)integration represents a transformative approach in semiconductor technology,enabling the vertical integration of diverse functionalities within a single chip.This review explores the ...
supported by the Research Grants Council of Hong Kong(C4001-23GF);Guangdong Basic and Applied Basic Research Foundation(2019B151502028);CUHK Postgraduate Studentship.
Strategic control over semiconductor conductivity and charge type is fundamental to electronic devices,giving rise to a plethora of groundbreaking inventions[1].Doping serves as the cornerstone for modulating the n-ty...
supported by the National Natural Science Foundation of China(Grant number W2432035);financial support from the EPSRC SWIMS(EP/V039717/1);Royal Society(RGS\R1\221009 and IEC\NSFC\211201);Leverhulme Trust(RPG-2022-263);Ser Cymru programme–Enhancing Competitiveness Equipment Awards 2022-23(MA/VG/2715/22-PN66);the financial support from Kingdom of Saudi Arabia Ministry of Higher Education.
Electrical energy is essential for modern society to sustain economic growths.The soaring demand for the electrical energy,together with an awareness of the environmental impact of fossil fuels,has been driving a shif...
support from the National Key R&D Program of the Ministry of Science and Technology of China(Project No.2022YFA1203804);the Hong Kong Polytechnic University(Project Nos.P0034827,P0042711,P0039734,P0039679,URIS2023-050,and URIS2023-052);PolyU RCNN(Project No.P0048122);Research Grants Council,Hong Kong(Project Nos.P0046939 and P0045061);supported by the National Natural Science Foundation of China(Grant No.12204346).
Atomically thin two-dimensional(2D)semiconductors are attractive channel materials for next-generation field-effect transistors(FETs).The highperformance 2D electronics requires high-quality integration of highdielect...
Organic semiconductors (OSCs), as an emerging next-generation semiconductor material, hold promising prospects in fields such as flexible displays, electronic skins, smart healthcare,and the Internet of Things, due to...
Amongst all the scientific achievements in the 20th century,no single invention has impacted our lives more profoundly than the transistors,or semiconductors.Since we entered the era of computing in the 1960s,we have ...