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TRANSISTORS: 作品数：414被引量：402H指数：6; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：裴坚洪根深王志功张立国徐勇更多>>; 相关机构：中国科学院中国科学院微电子研究所北京大学西安电子科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划高等学校学科创新引智计划中国博士后科学基金更多>>

A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials: 《Nano-Micro Letters》2025年第8期294-305,共12页Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian; supported in part by STI 2030-Major Projects under Grant 2022ZD0209200;in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009);in part by National Natural Science Foundation of China under Grant No.62374099;in part by the Tsinghua-Toyota Joint Research Fund;in part by the Daikin Tsinghua Union Program;in part by Independent Research Program of School of Integrated Circuits,Tsinghua University;This work was also sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program.; Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of ...; 关键词：Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling

High‑Performance Gate‑All‑Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels: 《Nano-Micro Letters》2025年第7期42-52,共11页Wei Liao Wentao Qian Junyang An Lei Liang Zhiyan Hu Junzhuan Wang Linwei Yu; financial support received from the National Key Research Program of China under granted No.92164201;the National Natural Science Foundation of China for Distinguished Young Scholars No.62325403;the Fundamental Research Funds for the Central Universities,and the National Natural Science Foundation of China under No.61934004.; Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its appl...; 关键词：In-plane solid-liquid-solid Ultrathin silicon nanowires Gate-all-around field-effect transistors(GAA-FETs)

An ab initio dataset of size-dependent effective thermal conductivity for advanced technology transistors: 《Chinese Physics B》2025年第4期125-130,共6页Han Xie Ru Jia Yonglin Xia Lei Li Yue Hu Jiaxuan Xu Yufei Sheng Yuanyuan Wang Hua Bao; Project supported by the National Key R&D Project from Ministry of Science and Technology of China(Grant No.2022YFA1203100);the National Natural Science Foundation of China(Grant No.52122606);the funding from Shanghai Polytechnic University.; As the size of transistors shrinks and power density increases,thermal simulation has become an indispensable part of the device design procedure.However,existing works for advanced technology transistors use simplifi...; 关键词：size-dependent effective thermal conductivity advanced technology transistors ab initio computations micro/nano-scale heat transfer

Performance limit prediction of atomically thin In_(2)O_(3)transistors: 《Science China(Information Sciences)》2025年第4期395-396,共2页Zongmeng YANG Shibo FANG Linqiang XU Qiuhui LI Jichao DONG Ying LI Baochun WU Mughira GHAFOOR Peiqi YANG Ying GUO Shimin HOU Zhaochu LUO Jing LU; supported by National Natural Science Foundation of China(Grant Nos.12274002,91964101);Ministry of Science and Technology of China(Grant No.2022YFA1203904);Fundamental Research Funds for the Central Universities;High-performance Computing Platform of Peking University,and MatCloud+High Throughput Materials Simulation Engine。; Moore's law requires the downscaling of metal oxide semiconductor field effect transistors(MOSFETs)for future integrated circuits(ICs)development.The performance of Si-based MOSFETs becomes insufficient to meet the st...; 关键词：atomically smooth surfaces DOWNSCALING atomic layer deposition ald metal oxide semiconductor field effect transistors mosfets moores law atomically thin metal oxide semiconductor field effect transistors O transistors

Stretchable artificial vision sensor with retinomorphic transistorreservoir computing: 《Nano Research》2025年第3期486-493,共8页Tongrui Sun Xu Liu Yutong Xu Xinglei Zhao Pu Guo Junyao Zhang Ziyi Guo Yue Wu Shilei Dai Jia Huang; supported by the the Innovation Program of Shanghai Municipal Education Commission(No.2021-01-07-00-07-E00096);the National Natural Science Foundation of China(Nos.62074111 and 62374115);the National Key Research and Development Program of China(No.2022YFB3203502).; Artificial visual sensors(AVSs)with bio-inspired sensing and neuromorphic signal processing are essential for next-generation intelligent systems.Conventional optoelectronic devices employed in AVSs operate discretely...; 关键词：stretchable electronics artificial vision sensors(AVSs) retinomorphic transistors reservoir computing neuromorphic computing

Recent progress in organic optoelectronic synaptic transistor arrays:fabrication strategies and innovative applications of system integration被引量：1: 《Journal of Semiconductors》2025年第2期72-86,共15页Pu Guo Junyao Zhang Jia Huang; supported by the National Key Research and Development Program of China(2021YFA1101303);the National Natural Science Foundation of China(62374115);the Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00096).; The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and d...; 关键词：organic transistor arrays optoelectronic synaptic transistors neuromorphic systems system integration

Electrolyte-gated optoelectronic transistors for neuromorphic applications被引量：1: 《Journal of Semiconductors》2025年第2期6-22,共17页Jinming Bi Yanran Li Rong Lu Honglin Song Jie Jiang; supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069);the National Natural Science Foundation of China(52172169);the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02).; The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromo...; 关键词：neuromorphic computing electrolyte-gated transistors artificial synapses optoelectronic devices

Logic-in-memory cell enabling binary and ternary Boolean logics: 《Science China(Information Sciences)》2025年第2期366-375,共10页Jeongyun OH Juhee JEON Yunwoo SHIN Kyougah CHO Sangsig KIM; partially supported by National Research Foundation of Korea Grant funded by the Korean Government(MSIT)(Grant Nos.RS-2023-00260876,2022M317A3046571);Samsung Electronics(Grant No.IO201223-08257-01);Brain Korea 21 Plus Project;a Korea University Grant。; In computing systems,processing and memory units have been integrated into logic-in-memory(LiM)to enhance the computational efficiency and performance.LiM has been attempted to perform not only binary but also ternary...; 关键词：logic-in-memory reconfigurable channel modes ternary logic triple-gated feedback field-effect transistors

Enhancing performance of fullerene-based organic electrochemical transistors via side-chain engineering: 《Nano Research》2025年第2期905-912,共8页Wenxin Fang Zijie Li Chengdong Wang Xiaowei Zhao Junyu Li Gang Ye Fengwei Huo Li Qiu Yanxi Zhang Wei Huang; We acknowledge funding from the National Natural Science Foundation of China(Nos.22303071 and 51962036).; The performance of organic electrochemical transistors(OECTs)relies on the interaction between organic semiconductors and ions.Consequently,hydrophilic ethylene glycol(EG)side chains are incorporated into organic semi...; 关键词：organic electrochemical transistors fullerene derivatives ethylene glycol side chains ion and electron conduction

Large-scale high uniform optoelectronic synapses array for artificial visual neural network: 《Microsystems & Nanoengineering》2025年第1期247-256,共10页Fanqing Zhang Chunyang Li Zhicheng Chen Haiqiu Tan Zhongyi Li Chengzhai Lv Shuai Xiao Lining Wu Jing Zhao; supported by National Natural Science Foundation of China(NSFC,Grand No.62127810,61804009);State Key Laboratory of Explosion Science and Safety Protection(QNKT24-03),Xiaomi Young Scholar,Beijing Institute of Technology Research Fund Program for Young Scholars and Analysis&Testing Center,Beijing Institute of Technology.; Recently,the biologically inspired intelligent artificial visual neural system has aroused enormous interest.However,there are still significant obstacles in pursuing large-scale parallel and efficient visual memory a...; 关键词：optoelectronic synapses monolayer molybdenum disulfide artificial visual neural system convolutional neural network artificial visual neuromorphic systemwithin artificial visual neural network floating gate transistors synaptic plasticity

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