Visible-to-near-infrared photodetector based on graphene–MoTe2–graphene heterostructure  

作　　者：Rui-Xue Hu Xin-Li Ma Chun-Ha An Jing Liu 户瑞雪;马新莉;安春华;刘晶(State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering,Tianjin University)

机构地区：[1]State Key Laboratory of Precision Measurement Technology and Instrument,School of Precision Instruments and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China

出　　处：《Chinese Physics B》2019年第11期354-359,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.21405109);the Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments,China(Pilt No.1710)

摘　　要：Graphene and transition metal dichalcogenides(TMDs), two-dimensional materials, have been investigated wildely in recent years. As a member of the TMD family, MoTe2 possesses a suitable bandgap of ~1.0 eV for near infrared(NIR)photodetection. Here we stack the MoTe2 flake with two graphene flakes of high carrier mobility to form a graphene–MoTe2–graphene heterostructure. It exhibits high photo-response to a broad spectrum range from 500 nm to 1300 nm. The photoresponsivity is calculated to be 1.6 A/W for the 750-nm light under 2 V/0 V drain–source/gate bias, and 154 mA/W for the 1100-nm light under 0.5 V/60 V drain–source/gate bias. Besides, the polarity of the photocurrent under zero Vds can be efficiently tuned by the back gate voltage to satisfy different applications. Finally, we fabricate a vertical graphene–MoTe2–graphene heterostructure which shows improved photoresponsivity of 3.3 A/W to visible light.Graphene and transition metal dichalcogenides（TMDs）, two-dimensional materials, have been investigated wildely in recent years. As a member of the TMD family, MoTe2 possesses a suitable bandgap of ～1.0 eV for near infrared（NIR）photodetection. Here we stack the MoTe2 flake with two graphene flakes of high carrier mobility to form a graphene–MoTe2–graphene heterostructure. It exhibits high photo-response to a broad spectrum range from 500 nm to 1300 nm. The photoresponsivity is calculated to be 1.6 A/W for the 750-nm light under 2 V/0 V drain–source/gate bias, and 154 mA/W for the 1100-nm light under 0.5 V/60 V drain–source/gate bias. Besides, the polarity of the photocurrent under zero Vds can be efficiently tuned by the back gate voltage to satisfy different applications. Finally, we fabricate a vertical graphene–MoTe2–graphene heterostructure which shows improved photoresponsivity of 3.3 A/W to visible light.

关 键 词：two-dimensional materials van der WAALS HETEROSTRUCTURE transition metal dichalcogenides(TMDs) GRAPHENE PHOTODETECTOR 

分 类 号：TB3[一般工业技术—材料科学与工程]