Directly integrated mixed-dimensional van der Waals graphene/perovskite heterojunction for fast photodetection  

作　　者：Xiangshun Geng Peigen Zhang Jun Ren Guan-Hua Dun Yuanyuan Li Jialun Jin Chaolun Wang Xing Wu Dan Xie He Tian Yi Yang Tian-Ling Ren 

机构地区：[1]School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist),Tsinghua University,Beijing,China [2]Shanghai Key Laboratory of Multidimensional Information Processing,School of Communication and Electronic Engineering,East China Normal University,Shanghai,People's Republic of China

出　　处：《InfoMat》2022年第8期82-92,共11页信息材料（英文）

基　　金：Fok Ying-Tong Education Foundation,Grant/Award Number:171051;National Key R&D Program,Grant/Award Number:2020YFA0709800;National Natural Science Foundation of China,Grant/Award Numbers:U20A20168,51861145202,61874065,62022047;Beijing Natural Science Foundation,Grant/Award Number:M22020;Beijing National Research Center for Information Science and Technology Youth Innovation Fund,Grant/Award Number:BNR2021RC01007;State Key Laboratory of New Ceramic and Fine Processing Tsinghua University,Grant/Award Number:No.KF202109;The Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences;Tsinghua-Foshan Innovation Special Fund(TFISF),Grant/Award Number:2021THFS0217。

摘　　要：Mixed-dimensional(2D/3D)van der Waals(vdW)heterostructures made with complementary materials hold a lot of promise in the field of optoelectronic devices.Beyond simple mechanical stacking,directly growing the single-crystal perovskite on 2D materials to construct a high-quality vdW heterojunction can better promote carrier transport.In this work,a monolithic integrated graphene/perovskite heterojunction device is fabricated by directly growing a single-crystal hybrid perovskite on monolayer graphene.Due to the strong inter-face coupling,the hybrid device achieves self-powering behavior and exhibits prominent photoresponse properties with a fast response speed of up to 2.05μs.Moreover,the responsivity and detectivity can be boosted to up to 10.41 A W1 and 4.65×10^(12)Jones under the actuation of3 V bias.This technique not only improves the device performance,but also provides an effective guideline for the development of next-generation directly integrated vdW optoelectronic devices.

关 键 词：CH_(3)NH_(3)PbBr_(3) GRAPHENE PEROVSKITE PHOTODETECTORS van der WAALS integration 

分 类 号：TB34[一般工业技术—材料科学与工程]