Growth and characterization ofβ-Ga_(2)O_(3)thin films grown on off-angled Al_(2)O_(3)substrates by metal-organic chemical vapor deposition  

作　　者：Yabao Zhang Jun Zheng Peipei Ma Xueyi Zheng Zhi Liu Yuhua Zuo Chuanbo Li Buwen Cheng 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Science,Minzu University of China,Beijing 100081,China

出　　处：《Journal of Semiconductors》2022年第9期68-73,共6页半导体学报（英文版）

基　　金：the National Key Research and Development Program of China(Grant No.2018YFB2200500);the National Natural Science Foundation(Grant Nos.62050073,62090054,61975196).

摘　　要：Beta-gallium oxide(β-Ga_(2)O_(3))thin films were deposited on c-plane(0001)sapphire substrates with different mis-cut angles along<>by metal-organic chemical vapor deposition(MOCVD).The structural properties and surface morphology of as-grownβ-Ga_(2)O_(3)thin films were investigated in detail.It was found that by using thin buffer layer and mis-cut substrate technology,the full width at half maximum(FWHM)of the()diffraction peak of theβ-Ga_(2)O_(3)film is decreased from 2°on c-plane(0001)Al_(2)O_(3)substrate to 0.64°on an 8°off-angled c-plane(0001)Al_(2)O_(3)substrate.The surface root-mean-square(RMS)roughness can also be improved greatly and the value is 1.27 nm for 8°off-angled c-plane(0001)Al_(2)O_(3)substrate.Room temper-ature photoluminescence(PL)was observed,which was attributed to the self-trapped excitons formed by oxygen and gallium vacancies in the film.The ultraviolet-blue PL intensity related with oxygen and gallium vacancies is decreased with the increas-ing mis-cut angle,which is in agreement with the improved crystal quality measured by high resolution X-ray diffraction(HR-XRD).The present results provide a route for growing high qualityβ-Ga_(2)O_(3)film on Al_(2)O_(3)substrate.

关 键 词：β-Ga_(2)O_(3) HETEROEPITAXY mis-cut Al_(2)O_(3)substrates MOCVD 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN304.055[电子电信—物理电子学]