Recent progress on heteroepitaxial growth of single crystal diamond films  

作　　者：Vedaste Uwihoreye Yushuo Hu Guangyu Cao Xing Zhang Freddy E.Oropeza Kelvin H.L.Zhang 

机构地区：[1]College of Chemistry and Chemical Engineering,Xiamen University,Xiamen,China [2]Compound Semiconductor(Xiamen)Technology Co.,Ltd,Xiamen,China [3]IMDEA Energy Institute,Parque Tecnológico de Móstoles,Madrid,Spain

出　　处：《Electron》2024年第4期48-71,共24页电子(英文)

基　　金：Research and Development of Single Crystal Diamond Semiconductors and Device Technologies,Grant/Award Number:20233160A0738;National Natural Science Foundation of China,Grant/Award Number:22275154。

摘　　要：Diamond is an ultimate semiconductor with exceptional physical and chemical properties,such as an ultra‐wide bandgap,excellent carrier mobility,extreme thermal conductivity,and stability,making it highly desirable for various applications including power electronics,sensors,and optoelectronic devices.However,the challenge lies in growing the large‐size and high‐quality single‐crystal diamond films,which are crucial for realizing the full potential of this wonder material.Hetero-epitaxial growth has emerged as a promising approach to achieve single‐crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties.This review provides an overview of the advance-ments in diamond heteroepitaxy using microwave plasma‐assisted chemical vapor deposition,including the mechanism of heteroepitaxial growth,selection of substrates,film optimization,chemistry of defects,and doping.Moreover,recent progress on the device applications and perspectives is also discussed.

关 键 词：DIAMOND HETEROEPITAXY SEMICONDUCTORS thin films ultra‐wide bandgap 

分 类 号：TB3[一般工业技术—材料科学与工程]