THERMOREFLECTANCE

作品数：13被引量：15H指数：2
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相关领域：电子电信更多>>
相关作者：高雪松赵伟玮毕可东张春伟陈云飞更多>>
相关机构：东南大学更多>>
相关期刊：《Communications in Computational Physics》《International Journal of Minerals,Metallurgy and Materials》《Chinese Physics B》《Journal of Southeast University(English Edition)》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划王宽诚敎育基金广东省自然科学基金更多>>
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Logarithmic sensitivity ratio elucidates thermal transport physics in multivariate thermoreflectance experiments
《Fundamental Research》2025年第1期288-295,共8页Jing Tu Md Azimul Haque Derya Baran Wee-Liat Ong 
supported by the Natural Science Foundation of Zhejiang Province(LZ19E060002);National Natural Science Foundation of China(52150410417 and 51876186);the Fundamental Research Funds for the Central Universities,the Zhejiang-Saudi EMC2 Laboratory,and the ZJU-UIUC Institute;D.B.acknowledge the support by the King Abdullah University of Science and Technology(KAUST)Office of Sponsored Research(OSR)under Award No.OSR-CRG2018-3737.
We mathematically derived a sensitivity-based method that identifies the thermal transport physics and parameters suitable for multivariate nonlinear fits in a frequency-domain thermoreflectance(FDTR)experiment.Modern...
关键词：Multivariables Monte Carlo Correlation Thermal properties THERMOREFLECTANCE Thermal conductivity Frequency-domain thermoreflectance Sensitivity 
Observation of ballistic-diffusive thermal transport in GaN transistors using thermoreflectance thermal imaging被引量：1
《Rare Metals》2024年第1期389-394,共6页Zhi-Ke Liu Yang Shen Han-Ling Li Bing-Yang Cao 
financially supported by the National Natural Science Foundation of China (Nos.52327809,51825601 and U20A20301)。
To develop effective thermal management strategies for gallium-nitride (GaN) transistors, it is essential to accurately predict the device junction temperature. Since the width of the heat generation in the devices is...
关键词：temperature. TRANSISTORS GAN 
Fast-Converging and Asymptotic-Preserving Simulation of Frequency Domain Thermoreflectance
《Communications in Computational Physics》2023年第6期65-93,共29页Jia Liu Lei Wu 
The heat conduction under fast external excitation exists in many experiments measuring the thermal conductivity in solids,which is described by the phonon Boltzmann equation,i.e.,the Callaway’s model with dual relax...
关键词：Frequency domain thermoreflectance phonon Boltzmann equation general synthetic iterative scheme 
Pressure-driven anomalous thermal transport behaviors in gallium arsenide
《Journal of Materials Science & Technology》2023年第11期89-97,共9页Zhongyin Zhang Xuanhui Fan Jie Zhu Kunpeng Yuan Jing Zhou Dawei Tang 
financially supported by the National Natural Science Foundation of China(Nos.51720105007,51976025,and 52206219);the Fundamental Research Funds for the Central Universities(No.DUT22ZD216).
High-pressure has been widely utilized to improve material performances such as thermal conductiv-ityκand interfacial thermal conductance G.Gallium arsenide(GaAs)as a functional semiconductor has attracted extensive ...
关键词：Gallium arsenide High pressure Thermal conductivity Interfacial thermal conductance Time domain thermoreflectance 
Effect of chromium interlayer thickness on interfacial thermal conductance across copper/diamond interface被引量：2
《International Journal of Minerals,Metallurgy and Materials》2022年第11期2020-2031,共12页Xiaoyan Liu Fangyuan Sun Wei Wang Jie Zhao Luhua Wang Zhanxun Che Guangzhu Bai Xitao Wang Jinguo Wang Moon JKim Hailong Zhang 
financially supported by the National Natural Science Foundation of China (Nos. 51871014, 51571015);the National Youth Science Foundation, China (No. 51606193)
The thermal conductivity of diamond particles reinforced copper matrix composite as an attractive thermal management material is significantly lowered by the non-wetting heterointerface.The paper investigates the heat...
关键词：SPUTTERING DIAMOND metal/nonmetal interface interfacial thermal conductance time-domain thermoreflectance 
Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC被引量：1
《Fundamental Research》2021年第6期691-696,共6页Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang 
supported by the funding from National Natural Science Foundation of China(Grants No.61851406,61874128,and U1732268);Frontier Science Key Program of CAS(Grant No.QYZDY-SSWJSC032);Program of Shanghai Academic Research Leader(Grant No.19XD1404600);K.C.Wong Education Foundation(Grant No.GJTD-2019-11);Shenzhen Science and Technology Innovation Program(Grant No.JCYJ20190806142614541).
The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal c...
关键词：Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements 
Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer被引量：1
《Nano Research》2021年第10期3616-3620,共5页Susu Yang Houfu Song Yan Peng Lu Zhao Yuzhen Tong Feiyu Kang Mingsheng Xu Bo Sun Xinqiang Wang 
This work was supported by the National Natural Science Foundation of China(No.12004211);the Guangdong Natural Science Foundation(No.2019A1515010868);the Guangdong Key Research and Development Program(No.2019B010132001);Shenzhen Peacock Program;This work was also supported by Beijing Outstanding Young Scientist Program(No.BJJWZYJH0120191000103);the Major Science and Technology Innovation Project of Shandong Province(No.2019JZZY010210).
Achieving high interface thermal conductance is one of the biggest challenges in the nanoscale heat transport of GaN-based devices such as light emitting diodes(LEDs),and high electron mobility transistors(HEMTs).In t...
关键词：GaN thermal boundary conductance time-domain thermoreflectance(TDTR) diffuse mismatch model 
Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film
《Chinese Physics B》2021年第9期419-423,共5页Qing-Jian Lu Min Gao Chang Lu Fei Long Tai-Song Pan Yuan Lin 
Project supported by the National Natural Science Foundation of China(Grant Nos.61825102,51872038,and 52021001);the“111”Project,China(Grant No.B18011).
Vanadium dioxide(VO_(2))is a strongly correlated material,and it has become known due to its sharp metal-insulator transition(MIT)near room temperature.Understanding the thermal properties and their change across MIT ...
关键词：vanadium dioxide thin film thermal conductivity time-domain thermoreflectance 
Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance被引量：2
《Chinese Physics B》2019年第6期105-109,共5页Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61604049);the Shenzhen Municipal Research Project(Grant No.JCYJ20160531192714636)
Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to dire...
关键词：GAN HETEROEPITAXY thermal CONDUCTIVITY TRANSIENT THERMOREFLECTANCE ULTRAVIOLET laser 
Enhanced thermal transport across monolayer MoS2
《Nano Research》2018年第4期2173-2180,共8页Miguel Goni Jia Yang Aaron J. Schmidt 
Characterizing the thermal properties of MoS2 is important for the design of electronic devices based on this material. We used frequency domain thermoreflectance to study the cross-plane thermal transport in mechanic...
关键词：MOS2 cross plane thermal transport frequency domain thermoreflectance muscovite mica SiO2 
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