High performance solar-blind deep ultraviolet photodetectors viaβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single crystalline film  

作　　者：王必成 汤梓荧 郑湖颖 王立胜 王亚琪 王润晨 丘志仁 朱海 Bicheng Wang;Ziying Tang;Huying Zheng;Lisheng Wang;Yaqi Wang;Runchen Wang;Zhiren Qiu;Hai Zhu(State Key Laboratory of Optoelectronic Materials and Technologies,School of Physics,Sun Yat-Sen University,Guangzhou 510275,China;Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,School of Physics,Sun Yat-sen University,Guangzhou 510275,China)

机构地区：[1]State Key Laboratory of Optoelectronic Materials and Technologies,School of Physics,Sun Yat-Sen University,Guangzhou 510275,China [2]Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices,School of Physics,Sun Yat-sen University,Guangzhou 510275,China

出　　处：《Chinese Physics B》2023年第9期559-565,共7页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.U22A2073,11974433,91833301,and 11974122)。

摘　　要：We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.

关 键 词：deep ultraviolet FILM PHOTODETECTOR HETEROEPITAXY 

分 类 号：TN36[电子电信—物理电子学]