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作 者:Qin, Fuwen Zhang, Dong Bai, Yizhen Ju, Zhenhe Li, Shuangmei Li, Yucai Pang, Jiaqi Bian, Jiming
机构地区:[1]School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024,China [2]Key Laboratory of Materials Modification by Laser,Ion and Electron Beams,Ministry of Education,Dalian University of Technology,Dalian 116024,China [3]New Energy Source Research Center,Shenyang Institute of Engineering,Shenyang 110136,China [4]Department of Physics,Shenyang Institute of Engineering,Shenyang 110136,China
出 处:《Rare Metals》2012年第2期150-153,共4页稀有金属(英文版)
基 金:supported by the National Natural Science Foundation of China (No. 61040058) (No. 60976006);the Fundamental Research Funds for the Central Universities (No.DUT10LK01);the Science and Technology Foundation for Higher Education of Liaoning Province, China and Science and Technology Innovation Project Foundation for Higher Education School (No.707015)
摘 要:InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N 2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml min 1 . The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.
关 键 词:InN films ECR-PEMOCVD sapphire substrates semiconductor devices
分 类 号:TB383.2[一般工业技术—材料科学与工程]
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