SiC陶瓷非球面磨削工艺实验研究  

Experimental research on grinding technology for SiC aspherical surface

作　　者：李春慧[1] 栾殿荣[1] 刘立飞[1] 张飞虎[1] 陈江[1] 张勇[1] 

机构地区：[1]哈尔滨工业大学机电工程学院,哈尔滨150001

出　　处：《金刚石与磨料磨具工程》2012年第5期35-38,共4页Diamond & Abrasives Engineering

基　　金：国家重点基础研究计划资助项目(No.2011CB013202);国家自然科学基金资助项目(No.51175126)

摘　　要：为了研究磨削工艺参数对SiC材料磨削质量的影响规律,利用DMG铣磨加工中心做了SiC陶瓷平面磨削工艺实验,分析研究了包括主轴转速、磨削深度、进给速度在内的磨削工艺参数对工件表面粗糙度的影响。结果表明:工件表面粗糙度随着主轴转速的增加而减小,随着磨削深度和进给速度的增加而增加。在粗糙度工艺试验的基础上,以表面粗糙度最小为目标优选一组磨削工艺参数,进行了小口径SiC陶瓷非球面磨削实验,获得了较低的表面粗糙度值(0.5150μm)和较小的面形精度误差(4.668μm)。In order to study the effects of grinding parameters on surface quality of SiC material,the effects of different parameters including spindle speed,grinding depth and feed rate on surface roughness were analyzed through plane grinding experiments on DMG mill grinding center.The experimental results revealed that,the surface roughness decreased with the increase of spindle speed,and increased with the increase of grinding depth and feed rate.A group of optimal grinding parameter was chosen for the aspherical grinding experiment,with better surface roughness(0.5150 μm) and surface shape accuracy(4.668 μm) obtained.

关 键 词：SIC 磨削 表面粗糙度 面形误差 

分 类 号：TG580.6[金属学及工艺—金属切削加工及机床]