制备双面大面积BDD电极的HFCVD设备流场仿真与结构设计  

Gas flow field simulation and structure analysis of HFCVD system for uniform deposition of double-sided large-area BDD

作　　者：孙达飞[1] 卢文壮[1] 薛海鹏[1] 王浩[1] 张林[1] 左敦稳[1] 

机构地区：[1]南京航空航天大学机电学院,南京210016

出　　处：《金刚石与磨料磨具工程》2013年第2期8-13,共6页Diamond & Abrasives Engineering

基　　金：国家自然科学基金资助(51075211;51275230);教育部博士点基金项目(20113218110018);南京航空航天大学研究生创新基金资助(kfjj20110226)

摘　　要：用热丝化学气相沉积(HFCVD)法制备双面大面积掺硼金刚石(BDD)电极时,沉积系统的气体流场均匀性对薄膜质量均匀性有着重要影响。针对大面积BDD电极制备的设备流场问题,采用仿真分析,研究了相关结构与流场的关系。通过设计均匀分散的进出气口以及在基板四周配置宽度为20 mm的减速板,可以有效消除横向流速差和边缘流速峰值,与结构改进之前相比能显著提高流场均匀性,高低流速差值从0.04 m/s降低到0.005 m/s。研究结果为薄膜的均匀制备提供了必要条件。The uniform gas flow field in a hot filament chemical vapor deposition(HFCVD) system performs a very important function for the uniform deposition of double-sided large-area boron doped diamond(BDD).The relationship between HFCVD equipment structure and its flow field is studied through simulation and analysis.When using sporadic inlets and outlets with slow-down boards with a width of 20 mm around the base-board,the transverse velocity differential is decreased from 0.04 m/s to 0.005 m/s and limbic velocity peak is effectively removed,which makes the flow field more uniform.The results provide an essential condition for the uniform deposition of double-faced large area BDD coating.

关 键 词：掺硼金刚石 热丝化学气相沉积设备 气体流场 

分 类 号：TG43[金属学及工艺—焊接]